MOSFETs 100V TO263 7L JEDEC GREEN EMC Product overview: FDB0260N1007L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB0260N1007L can be used for catalog matching and distributor lookup.
N-Channel 100V 200A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7
N-Channel 100V 200A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7
N-Channel 100V 200A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7
MOSFET 100V TO263 7L JEDEC GREEN EMC
MOSFET N-CH 100V 200A TO263-7
MOSFET, N-CH, 100V, 200A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDB0260N1007L | FDB0260N1007LDKR-ND | FDB0260N1007L | FDB0260N1007L | 84Y5824 |
| Product Name | 100V MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 200A, To-263-7; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||
| Transconductance | 0.0590 kS | ||||
| PD | 3.8 milliwatts |
