MOSFET N-CH 80V 120A TO263-7
MOSFETs 80V N-Channel PowerTrench MOSFET Product overview: FDB024N08BL7 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB024N08BL7 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1173695-FDB024N08BL7
Series: PowerTrench
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-7, D2Pak (6 Leads + Tab)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Family Name: FDB024N08BL7
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: D2PAK (TO-263)
Channel Type Type: N
Drain Source Voltage: 80V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 178nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 13530pF @ 40V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 246W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): IPB030N08N3GATMA1; IPB019N08N3GATMA1;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 800
N-Channel 80V 120A (Tc) 246W (Tc) Surface Mount TO-263-7
N-Channel 80V 120A (Tc) 246W (Tc) Surface Mount TO-263-7
N-Channel 80V 120A (Tc) 246W (Tc) Surface Mount TO-263-7
MOSFET 80V N-Channel PowerTrench MOSFET
MOSFET N-CH 80V 120A TO263-7
MOSFET, N-CH, 80V, 120A, 175DEG C, 246W ROHS COMPLIANT: YES
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDB024N08BL7 | 2088-FDB024N08BL7 | 1173695-FDB024N08BL7 | FDB024N08BL7TR-ND | FDB024N08BL7 | FDB024N08BL7 | 54AH8614 |
| Product Name | Single FETs, MOSFETs | N-Channel 80V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N08BL7 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 80V, 120A, 175Deg C, 246W Rohs Compliant Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 80 volts | ||||||
| IDSS | 120000 milliamps | ||||||
| PD | 246000 milliwatts | 246 milliwatts |
