onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N08BL7 FDB024N08BL7

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1173695-FDB024N08BL7 Series: PowerTrench Packaging: Reel - TR Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-7, D2Pak (6 Leads + Tab) Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Family Name: FDB024N08BL7 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: D2PAK (TO-263) Channel Type Type: N Drain Source Voltage: 80V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 13530pF @ 40V Vgs (Maximum): ±20V Power Dissipation (Maximum): 246W (Tc) Rds On (Maximum) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Alternative Parts (Cross-Reference): IPB030N08N3GATMA1; IPB019N08N3GATMA1; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1173695-FDB024N08BL7 Series: PowerTrench Packaging: Reel - TR Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-7, D2Pak (6 Leads + Tab) Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Family Name: FDB024N08BL7 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: D2PAK (TO-263) Channel Type Type: N Drain Source Voltage: 80V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 13530pF @ 40V Vgs (Maximum): ±20V Power Dissipation (Maximum): 246W (Tc) Rds On (Maximum) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Alternative Parts (Cross-Reference): IPB030N08N3GATMA1; IPB019N08N3GATMA1; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 800
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N08BL7 - 1173695-FDB024N08BL7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N08BL7
1173695-FDB024N08BL7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N08BL7 1173695-FDB024N08BL7
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1173695-FDB024N08BL7 Series: PowerTrench Packaging: Reel - TR Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-7, D2Pak (6 Leads + Tab) Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Family Name: FDB024N08BL7 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: D2PAK (TO-263) Channel Type Type: N Drain Source Voltage: 80V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 13530pF @ 40V Vgs (Maximum): ±20V Power Dissipation (Maximum): 246W (Tc) Rds On (Maximum) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Alternative Parts (Cross-Reference): IPB030N08N3GATMA1; IPB019N08N3GATMA1; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1173695-FDB024N08BL7
Series: PowerTrench
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-7, D2Pak (6 Leads + Tab)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Family Name: FDB024N08BL7
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: D2PAK (TO-263)
Channel Type Type: N
Drain Source Voltage: 80V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 178nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 13530pF @ 40V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 246W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): IPB030N08N3GATMA1; IPB019N08N3GATMA1;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB024N08BL7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB024N08BL7
Single FETs, MOSFETs FDB024N08BL7
MOSFET N-CH 80V 120A TO263-7

MOSFET N-CH 80V 120A TO263-7

Supplier's Site Datasheet
Single FETs, MOSFETs - FDB024N08BL7TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB024N08BL7TR-ND
Single FETs, MOSFETs FDB024N08BL7TR-ND
N-Channel 80V 120A (Tc) 246W (Tc) Surface Mount TO-263-7

N-Channel 80V 120A (Tc) 246W (Tc) Surface Mount TO-263-7

Buy Now Datasheet
Single FETs, MOSFETs - FDB024N08BL7CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB024N08BL7CT-ND
Single FETs, MOSFETs FDB024N08BL7CT-ND
N-Channel 80V 120A (Tc) 246W (Tc) Surface Mount TO-263-7

N-Channel 80V 120A (Tc) 246W (Tc) Surface Mount TO-263-7

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Single FETs, MOSFETs - FDB024N08BL7DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB024N08BL7DKR-ND
Single FETs, MOSFETs FDB024N08BL7DKR-ND
N-Channel 80V 120A (Tc) 246W (Tc) Surface Mount TO-263-7

N-Channel 80V 120A (Tc) 246W (Tc) Surface Mount TO-263-7

Buy Now Datasheet
Singapore
N-Channel 80V MOSFET Transistor
2088-FDB024N08BL7
N-Channel 80V MOSFET Transistor 2088-FDB024N08BL7
MOSFETs 80V N-Channel PowerTrench MOSFET Product overview: FDB024N08BL7 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB024N08BL7 can be used for catalog matching and distributor lookup.

MOSFETs 80V N-Channel PowerTrench MOSFET Product overview: FDB024N08BL7 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB024N08BL7 can be used for catalog matching and distributor lookup.

Supplier's Site
Mosfet, N-Ch, 80V, 120A, 175Deg C, 246W Rohs Compliant Onsemi - 54AH8614 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 80V, 120A, 175Deg C, 246W Rohs Compliant Onsemi
54AH8614
Mosfet, N-Ch, 80V, 120A, 175Deg C, 246W Rohs Compliant Onsemi 54AH8614
MOSFET, N-CH, 80V, 120A, 175DEG C, 246W ROHS COMPLIANT: YES

MOSFET, N-CH, 80V, 120A, 175DEG C, 246W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB024N08BL7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB024N08BL7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB024N08BL7
MOSFET N-CH 80V 120A TO263-7

MOSFET N-CH 80V 120A TO263-7

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 80V N-Channel PowerTrench MOSFET

MOSFET 80V N-Channel PowerTrench MOSFET

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1173695-FDB024N08BL7 FDB024N08BL7 FDB024N08BL7TR-ND 2088-FDB024N08BL7 54AH8614 FDB024N08BL7 FDB024N08BL7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N08BL7 Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 80V MOSFET Transistor Mosfet, N-Ch, 80V, 120A, 175Deg C, 246W Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type TO-263; SOT3 TO-263; TO-263-7, D²Pak (6 Leads + Tab) TO-263; TO-263-7, D2PAK (6 Leads + Tab) Reel TO-3 TO-263; TO-263-7, D2PAK (6 Leads + Tab)
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 80 volts
IDSS 120000 milliamps
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