Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037955-FDB024N06
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 395W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 226nC @ 10V
Max Input Capacitance: 14885pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800
MOSFETs 60V N-Channel PowerTrench Product overview: FDB024N06 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB024N06 can be used for catalog matching and distributor lookup.
N-Channel 60V 120A (Tc) 395W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 120A (Tc) 395W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 120A (Tc) 395W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 60V 120A D2PAK
MOSFET 60V N-Channel PowerTrench
MOSFET N-CH 60V 120A D2PAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1037955-FDB024N06 | 2088-FDB024N06 | FDB024N06TR-ND | FDB024N06 | FDB024N06 | FDB024N06 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N06 | N-Channel 60V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | ||||
| PD | 395000 milliwatts | 395 milliwatts | 395000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-263; SOT3; D2PAK (TO-263AB) | Reel | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
