onsemi Single FETs, MOSFETs FDB024N06

Description
MOSFET N-CH 60V 120A D2PAK
Request a Quote Datasheet
Description
MOSFET N-CH 60V 120A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDB024N06 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB024N06
Single FETs, MOSFETs FDB024N06
MOSFET N-CH 60V 120A D2PAK

MOSFET N-CH 60V 120A D2PAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N06 - 1037955-FDB024N06 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N06
1037955-FDB024N06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N06 1037955-FDB024N06
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037955-FDB024N06 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 395W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 226nC @ 10V Max Input Capacitance: 14885pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.4 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037955-FDB024N06
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 395W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 226nC @ 10V
Max Input Capacitance: 14885pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDB024N06TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB024N06TR-ND
Single FETs, MOSFETs FDB024N06TR-ND
N-Channel 60V 120A (Tc) 395W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 120A (Tc) 395W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB024N06CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB024N06CT-ND
Single FETs, MOSFETs FDB024N06CT-ND
N-Channel 60V 120A (Tc) 395W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 120A (Tc) 395W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FDB024N06DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB024N06DKR-ND
Single FETs, MOSFETs FDB024N06DKR-ND
N-Channel 60V 120A (Tc) 395W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 120A (Tc) 395W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
N-Channel 60V MOSFET Transistor
2088-FDB024N06
N-Channel 60V MOSFET Transistor 2088-FDB024N06
MOSFETs 60V N-Channel PowerTrench Product overview: FDB024N06 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB024N06 can be used for catalog matching and distributor lookup.

MOSFETs 60V N-Channel PowerTrench Product overview: FDB024N06 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB024N06 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 60V N-Channel PowerTrench

MOSFET 60V N-Channel PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB024N06 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB024N06
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB024N06
MOSFET N-CH 60V 120A D2PAK

MOSFET N-CH 60V 120A D2PAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDB024N06 1037955-FDB024N06 FDB024N06TR-ND 2088-FDB024N06 FDB024N06 FDB024N06
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB024N06 Single FETs, MOSFETs N-Channel 60V MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 120000 milliamps
PD 395000 milliwatts 395000 milliwatts 395 milliwatts
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