onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FDB0170N607L

Description
Manufacturer: Fairchild Semiconductor Win Source Part Number: 1323920-FDB0170N607L Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Bulk Standard Package: 1 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W, 250W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-263-7, D²Pak (6 Leads + Tab) ECCN: EAR99 Fake Threat In the Open Market: 79 HTSUS: 8542.39.0001 Other Part Number: 2156-FDB0170N607L,ON SFSCFDB0170N607L Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet
Description
Manufacturer: Fairchild Semiconductor Win Source Part Number: 1323920-FDB0170N607L Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Bulk Standard Package: 1 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W, 250W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-263-7, D²Pak (6 Leads + Tab) ECCN: EAR99 Fake Threat In the Open Market: 79 HTSUS: 8542.39.0001 Other Part Number: 2156-FDB0170N607L,ON SFSCFDB0170N607L Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323920-FDB0170N607L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1323920-FDB0170N607L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1323920-FDB0170N607L
Manufacturer: Fairchild Semiconductor Win Source Part Number: 1323920-FDB0170N607L Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Bulk Standard Package: 1 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W, 250W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-263-7, D²Pak (6 Leads + Tab) ECCN: EAR99 Fake Threat In the Open Market: 79 HTSUS: 8542.39.0001 Other Part Number: 2156-FDB0170N607L,ON SFSCFDB0170N607L Drive Voltage (Max Rds On, Min Rds On): 10V

Manufacturer: Fairchild Semiconductor
Win Source Part Number: 1323920-FDB0170N607L
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Bulk
Standard Package: 1
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W, 250W (Tc)
Supplier Device Package: TO-263-7
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-263-7, D²Pak (6 Leads + Tab)
ECCN: EAR99
Fake Threat In the Open Market: 79
HTSUS: 8542.39.0001
Other Part Number: 2156-FDB0170N607L,ONSFSCFDB0170N607L
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore
60V MOSFET Transistor
2088-FDB0170N607L
60V MOSFET Transistor 2088-FDB0170N607L
MOSFETs 60V TO263 7L JEDEC GREEN EMC Product overview: FDB0170N607L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB0170N607L can be used for catalog matching and distributor lookup.

MOSFETs 60V TO263 7L JEDEC GREEN EMC Product overview: FDB0170N607L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB0170N607L can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - FDB0170N607L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDB0170N607L
Single FETs, MOSFETs FDB0170N607L
MOSFET N-CH 60V 300A TO263-7

MOSFET N-CH 60V 300A TO263-7

Supplier's Site Datasheet
Single FETs, MOSFETs - FDB0170N607LCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB0170N607LCT-ND
Single FETs, MOSFETs FDB0170N607LCT-ND
N-Channel 60V 300A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7

N-Channel 60V 300A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7

Buy Now Datasheet
Single FETs, MOSFETs - FDB0170N607LTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB0170N607LTR-ND
Single FETs, MOSFETs FDB0170N607LTR-ND
N-Channel 60V 300A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7

N-Channel 60V 300A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7

Buy Now Datasheet
Single FETs, MOSFETs - FDB0170N607LDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDB0170N607LDKR-ND
Single FETs, MOSFETs FDB0170N607LDKR-ND
N-Channel 60V 300A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7

N-Channel 60V 300A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDB0170N607L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDB0170N607L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDB0170N607L
MOSFET N-CH 60V 300A TO263-7

MOSFET N-CH 60V 300A TO263-7

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V TO263 7L JEDEC GREEN EMC

MOSFET 60V TO263 7L JEDEC GREEN EMC

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1323920-FDB0170N607L 2088-FDB0170N607L FDB0170N607L FDB0170N607LCT-ND FDB0170N607L FDB0170N607L
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 60V MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
PD 3800 to 250000 milliwatts 3.8 milliwatts 3800 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; TO-263-7, D²Pak (6 Leads + Tab) Reel TO-263; TO-263-7, D²Pak (6 Leads + Tab) TO-263; TO-263-7, D2PAK (6 Leads + Tab) 243 nC @ 10 V
Packing Method Bulk; Bulk Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Unlock Full Specs
to access all available technical data