Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015912-FDB016N04AL7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 283W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263)
Dimension: TO-263-7, D2Pak (6 Leads + Tab)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 160A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 167nC @ 10V
Max Input Capacitance: 11600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.6 mOhm @ 80A, 10V
Alternative Parts (Cross-Reference): IPB160N04S4H1ATMA1; IXTA340N04T4-7; STH410N4F7-6AG;
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Quantity per package: 800
N-Channel 40V 160A (Tc) 283W (Tc) Surface Mount TO-263-7
MOSFETs 40V N-Channel PowerTrench MOSFET Product overview: FDB016N04AL7 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDB016N04AL7 can be used for catalog matching and distributor lookup.
MOSFET N-CH 40V 160A TO263-7
MOSFET 40V N-Channel PowerTrench MOSFET
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 015912-FDB016N04AL7 | FDB016N04AL7TR-ND | 2088-FDB016N04AL7 | FDB016N04AL7 | FDB016N04AL7 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB016N04AL7 | Single FETs, MOSFETs | N-Channel 40V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 40 volts | ||||
| PD | 283000 milliwatts | 283 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) |