onsemi Single FETs, MOSFETs FDAF59N30

Description
N-Channel 300V 34A (Tc) 161W (Tc) Through Hole TO-3PF
Request a Quote Datasheet
Description
N-Channel 300V 34A (Tc) 161W (Tc) Through Hole TO-3PF
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - FDAF59N30-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDAF59N30-ND
Single FETs, MOSFETs FDAF59N30-ND
N-Channel 300V 34A (Tc) 161W (Tc) Through Hole TO-3PF

N-Channel 300V 34A (Tc) 161W (Tc) Through Hole TO-3PF

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDAF59N30 - 1037953-FDAF59N30 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDAF59N30
1037953-FDAF59N30
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDAF59N30 1037953-FDAF59N30
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037953-FDAF59N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 161W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PF Dimension: SC-94 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 34A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 4670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 56 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037953-FDAF59N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 161W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PF
Dimension: SC-94
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 34A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 4670pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 56 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDAF59N30 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDAF59N30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDAF59N30
MOSFET N-CH 300V 34A TO3PF

MOSFET N-CH 300V 34A TO3PF

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDAF59N30-ND 1037953-FDAF59N30 FDAF59N30
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDAF59N30 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3 Full Pack TO-3; SOT3; TO-3PF TO-3P-3 Full Pack
V(BR)DSS 300 volts
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