N-Channel 300V 59A (Tc) 500W (Tc) Through Hole TO-3PN
MOSFETs 300V NCH MOSFET Product overview: FDA59N30 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 300V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDA59N30 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037948-FDA59N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Family Name: FDA59N30
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 59A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 4670pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 56 mOhm @ 29.5A, 10V
Alternative Parts (Cross-Reference): TK50J30D; STW46NF30; STW75NF30; STY60NK30Z;
Introduction Date: July 07, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 450
MOSFET N-CH 300V 59A TO3PN
MOSFET N-CH 300V 59A TO3PN
MOSFET, N CHANNEL, 300V, 59A, TO-3PN-3, 0.047OHM, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N CHANNEL, 300V, 59A, TO-3PN-3; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:59A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
300V 59A 500W 56mΩ@10V,29.5A 5V@250uA N Channel TO-3P MOSFETs ROHS
| RS Components, Ltd. | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Radwell International | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1867378 | 1868132P | FDA59N30-ND | 2088-FDA59N30 | 1037948-FDA59N30 | FDA59N30 | FDA59N30 | FDA59N30 | 38466171 | 04M9076 | FDA59N30 |
| Product Name | Bipolar Transistors | Bipolar Transistors | Single FETs, MOSFETs | 300V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA59N30 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Transistor | Mosfet, N Channel, 300V, 59A, To-3Pn-3; Channel Type Onsemi | Triode/MOS Tube/Transistor >> MOSFETs |
| Package Type | To-3p | TO-3P | TO-3; TO-3P-3, SC-65-3 | Tube | TO-3; SOT3; TO-3PN | 100 nC @ 10 V | TO-3; TO-3P-3, SC-65-3 | TO-3 | TO-3 | ||
| Number of units in IC | 1 | ||||||||||
| TJ | 150 C (302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement |
