onsemi Single FETs, MOSFETs FDA59N25

Description
MOSFET N-CH 250V 59A TO3PN
  • Single FETs, MOSFETs - FDA59N25 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA59N25 - 066903-FDA59N25 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDA59N25-ND - DigiKey
    DigiKey
  • Mosfet, N, To-3P; Channel Type Onsemi - 04M9075 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA59N25 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 250V 59A TO3PN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDA59N25 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDA59N25
Single FETs, MOSFETs FDA59N25
MOSFET N-CH 250V 59A TO3PN

MOSFET N-CH 250V 59A TO3PN

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA59N25 - 066903-FDA59N25 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA59N25
066903-FDA59N25
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA59N25 066903-FDA59N25
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066903-FDA59N25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 392W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 82nC @ 10V Max Input Capacitance: 4020pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 49 mOhm @ 29.5A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066903-FDA59N25
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 392W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 59A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 4020pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 49 mOhm @ 29.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FDA59N25-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDA59N25-ND
Single FETs, MOSFETs FDA59N25-ND
N-Channel 250V 59A (Tc) 392W (Tc) Through Hole TO-3PN

N-Channel 250V 59A (Tc) 392W (Tc) Through Hole TO-3PN

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDA59N25
MOSFET FDA59N25
MOSFET 250V N-Ch MOSFET

MOSFET 250V N-Ch MOSFET

Buy Now Datasheet
Mosfet, N, To-3P; Channel Type Onsemi - 04M9075 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-3P; Channel Type Onsemi
04M9075
Mosfet, N, To-3P; Channel Type Onsemi 04M9075
MOSFET, N, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:59A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:392W; MSL:-RoHS Compliant: Yes

MOSFET, N, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:59A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:392W; MSL:-RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA59N25 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDA59N25
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDA59N25
MOSFET N-CH 250V 59A TO3PN

MOSFET N-CH 250V 59A TO3PN

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDA59N25 066903-FDA59N25 FDA59N25-ND FDA59N25 04M9075 FDA59N25
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA59N25 Single FETs, MOSFETs MOSFET Mosfet, N, To-3P; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 250 volts 250 volts
IDSS 59000 milliamps 59000 milliamps
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