N-Channel 250V 59A (Tc) 392W (Tc) Through Hole TO-3PN
MOSFETs 250V N-Ch MOSFET Product overview: FDA59N25 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDA59N25 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066903-FDA59N25
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 392W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 59A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 4020pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 49 mOhm @ 29.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 450
MOSFET N-CH 250V 59A TO3PN
MOSFET, N, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:59A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:392W; MSL:-RoHS Compliant: Yes
MOSFET N-CH 250V 59A TO3PN
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDA59N25-ND | 2088-FDA59N25 | 066903-FDA59N25 | FDA59N25 | 04M9075 | FDA59N25 | FDA59N25 |
| Product Name | Single FETs, MOSFETs | 250V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA59N25 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N, To-3P; Channel Type Onsemi | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-3; TO-3P-3, SC-65-3 | Tube | TO-3; SOT3; TO-3PN | 10V | TO-3 | TO-3; TO-3P-3, SC-65-3 | |
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0450 kS | ||||||
| PD | 392 milliwatts | 392000 milliwatts | 392000 milliwatts | 392000 milliwatts |
