onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA59N25 FDA59N25

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066903-FDA59N25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 392W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 82nC @ 10V Max Input Capacitance: 4020pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 49 mOhm @ 29.5A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 450
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA59N25 - 066903-FDA59N25 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDA59N25 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDA59N25-ND - DigiKey
    DigiKey
  • Mosfet, N, To-3P; Channel Type Onsemi - 04M9075 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA59N25 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066903-FDA59N25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 392W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 82nC @ 10V Max Input Capacitance: 4020pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 49 mOhm @ 29.5A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA59N25 - 066903-FDA59N25 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA59N25
066903-FDA59N25
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA59N25 066903-FDA59N25
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066903-FDA59N25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 392W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 82nC @ 10V Max Input Capacitance: 4020pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 49 mOhm @ 29.5A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066903-FDA59N25
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 392W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 59A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 4020pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 49 mOhm @ 29.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FDA59N25 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDA59N25
Single FETs, MOSFETs FDA59N25
MOSFET N-CH 250V 59A TO3PN

MOSFET N-CH 250V 59A TO3PN

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
250V MOSFET Transistor
2088-FDA59N25
250V MOSFET Transistor 2088-FDA59N25
MOSFETs 250V N-Ch MOSFET Product overview: FDA59N25 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDA59N25 can be used for catalog matching and distributor lookup.

MOSFETs 250V N-Ch MOSFET Product overview: FDA59N25 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDA59N25 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - FDA59N25-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDA59N25-ND
Single FETs, MOSFETs FDA59N25-ND
N-Channel 250V 59A (Tc) 392W (Tc) Through Hole TO-3PN

N-Channel 250V 59A (Tc) 392W (Tc) Through Hole TO-3PN

Buy Now Datasheet
Mosfet, N, To-3P; Channel Type Onsemi - 04M9075 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-3P; Channel Type Onsemi
04M9075
Mosfet, N, To-3P; Channel Type Onsemi 04M9075
MOSFET, N, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:59A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:392W; MSL:-RoHS Compliant: Yes

MOSFET, N, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:59A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:392W; MSL:-RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDA59N25
MOSFET FDA59N25
MOSFET 250V N-Ch MOSFET

MOSFET 250V N-Ch MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA59N25 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDA59N25
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDA59N25
MOSFET N-CH 250V 59A TO3PN

MOSFET N-CH 250V 59A TO3PN

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 066903-FDA59N25 FDA59N25 2088-FDA59N25 FDA59N25-ND 04M9075 FDA59N25 FDA59N25
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA59N25 Single FETs, MOSFETs 250V MOSFET Transistor Single FETs, MOSFETs Mosfet, N, To-3P; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 250 volts 250 volts
PD 392000 milliwatts 392000 milliwatts 392 milliwatts 392000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-3; SOT3; TO-3PN TO-3; TO-3P-3, SC-65-3 Tube TO-3; TO-3P-3, SC-65-3 TO-3 10V
Unlock Full Specs
to access all available technical data