onsemi Single FETs, MOSFETs FDA50N50

Description
POWER FIELD-EFFECT TRANSISTOR, 4
Request a Quote Datasheet
Description
POWER FIELD-EFFECT TRANSISTOR, 4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDA50N50 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDA50N50
Single FETs, MOSFETs FDA50N50
POWER FIELD-EFFECT TRANSISTOR, 4

POWER FIELD-EFFECT TRANSISTOR, 4

Supplier's Site Datasheet
Single FETs, MOSFETs - FDA50N50-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDA50N50-ND
Single FETs, MOSFETs FDA50N50-ND
N-Channel 500V 48A (Tc) 625W (Tc) Through Hole TO-3PN

N-Channel 500V 48A (Tc) 625W (Tc) Through Hole TO-3PN

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA50N50 - 040252-FDA50N50 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA50N50
040252-FDA50N50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA50N50 040252-FDA50N50
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040252-FDA50N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625W (Tc) Family Name: FDA50N50 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 48A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 137nC @ 10V Max Input Capacitance: 6460pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 105 mOhm @ 24A, 10V Alternative Parts (Cross-Reference): 2SK3131; 2SK3131(Q); RJL5020DPK-00#T0; RJL5020DPK-00-T0; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040252-FDA50N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625W (Tc)
Family Name: FDA50N50
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 48A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 137nC @ 10V
Max Input Capacitance: 6460pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 105 mOhm @ 24A, 10V
Alternative Parts (Cross-Reference): 2SK3131; 2SK3131(Q); RJL5020DPK-00#T0; RJL5020DPK-00-T0;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Singapore
N-Channel 500V 48A MOSFET Transistor
278-FDA50N50
N-Channel 500V 48A MOSFET Transistor 278-FDA50N50
500V 48A N-Channel Power MOSFET 105mR TO-3P Product overview: FDA50N50 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 48A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 48A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDA50N50 can be used for catalog matching and distributor lookup.

500V 48A N-Channel Power MOSFET 105mR TO-3P Product overview: FDA50N50 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 48A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 48A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDA50N50 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FDA50N50
MOSFET FDA50N50
MOSFET 500V NCH MOSFET

MOSFET 500V NCH MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA50N50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDA50N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDA50N50
MOSFET N-CH 500V 48A TO3PN

MOSFET N-CH 500V 48A TO3PN

Supplier's Site
Mosfet, N-Ch, 500V, 48A, To-3Pn-3; Channel Type Onsemi - 31Y1334 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 48A, To-3Pn-3; Channel Type Onsemi
31Y1334
Mosfet, N-Ch, 500V, 48A, To-3Pn-3; Channel Type Onsemi 31Y1334
MOSFET, N-CH, 500V, 48A, TO-3PN-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:48A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

MOSFET, N-CH, 500V, 48A, TO-3PN-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:48A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDA50N50 FDA50N50-ND 040252-FDA50N50 278-FDA50N50 FDA50N50 FDA50N50 31Y1334
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA50N50 N-Channel 500V 48A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 500V, 48A, To-3Pn-3; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 48000 milliamps 48000 milliamps
Unlock Full Specs
to access all available technical data