POWER FIELD-EFFECT TRANSISTOR, 4
N-Channel 500V 48A (Tc) 625W (Tc) Through Hole TO-3PN
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040252-FDA50N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625W (Tc)
Family Name: FDA50N50
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 48A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 137nC @ 10V
Max Input Capacitance: 6460pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 105 mOhm @ 24A, 10V
Alternative Parts (Cross-Reference): 2SK3131; 2SK3131(Q); RJL5020DPK-00#T0; RJL5020DPK-00-T0;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 450
500V 48A N-Channel Power MOSFET 105mR TO-3P Product overview: FDA50N50 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 48A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 48A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDA50N50 can be used for catalog matching and distributor lookup.
MOSFET N-CH 500V 48A TO3PN
MOSFET, N-CH, 500V, 48A, TO-3PN-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:48A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDA50N50 | FDA50N50-ND | 040252-FDA50N50 | 278-FDA50N50 | FDA50N50 | 31Y1334 | FDA50N50 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA50N50 | N-Channel 500V 48A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 500V, 48A, To-3Pn-3; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 500 volts | 500 volts | |||||
| IDSS | 48000 milliamps | 48000 milliamps |