onsemi Single FETs, MOSFETs FDA28N50

Description
N-Channel 500V 28A (Tc) 310W (Tc) Through Hole TO-3PN
  • Single FETs, MOSFETs - FDA28N50-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDA28N50 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA28N50 - 140506-FDA28N50 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA28N50 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 500V, 28A, 150Deg C, 310W Rohs Compliant Onsemi - 54AH8611 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 500V 28A (Tc) 310W (Tc) Through Hole TO-3PN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDA28N50-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDA28N50-ND
Single FETs, MOSFETs FDA28N50-ND
N-Channel 500V 28A (Tc) 310W (Tc) Through Hole TO-3PN

N-Channel 500V 28A (Tc) 310W (Tc) Through Hole TO-3PN

Buy Now Datasheet
Single FETs, MOSFETs - FDA28N50 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDA28N50
Single FETs, MOSFETs FDA28N50
MOSFET N-CH 500V 28A TO3PN

MOSFET N-CH 500V 28A TO3PN

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA28N50 - 140506-FDA28N50 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA28N50
140506-FDA28N50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA28N50 140506-FDA28N50
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 140506-FDA28N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 5140pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 155 mOhm @ 14A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics, Lighting Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 140506-FDA28N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 105nC @ 10V
Max Input Capacitance: 5140pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 155 mOhm @ 14A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics, Lighting
Quantity per package: 450

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA28N50 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDA28N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDA28N50
MOSFET N-CH 500V 28A TO3PN

MOSFET N-CH 500V 28A TO3PN

Supplier's Site
Mosfet, N-Ch, 500V, 28A, 150Deg C, 310W Rohs Compliant Onsemi - 54AH8611 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 28A, 150Deg C, 310W Rohs Compliant Onsemi
54AH8611
Mosfet, N-Ch, 500V, 28A, 150Deg C, 310W Rohs Compliant Onsemi 54AH8611
MOSFET, N-CH, 500V, 28A, 150DEG C, 310W ROHS COMPLIANT: YES

MOSFET, N-CH, 500V, 28A, 150DEG C, 310W ROHS COMPLIANT: YES

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDA28N50
MOSFET FDA28N50
MOSFET UniFET 500V

MOSFET UniFET 500V

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDA28N50-ND FDA28N50 140506-FDA28N50 FDA28N50 54AH8611 FDA28N50
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA28N50 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 500V, 28A, 150Deg C, 310W Rohs Compliant Onsemi MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3PN 10V TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
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