onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50F FDA24N50F

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037944-FDA24N50F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 270W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 85nC @ 10V Max Input Capacitance: 4310pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 200 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Quantity per package: 450
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037944-FDA24N50F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 270W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 85nC @ 10V Max Input Capacitance: 4310pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 200 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50F - 1037944-FDA24N50F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50F
1037944-FDA24N50F
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50F 1037944-FDA24N50F
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037944-FDA24N50F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 270W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 85nC @ 10V Max Input Capacitance: 4310pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 200 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037944-FDA24N50F
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 270W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 85nC @ 10V
Max Input Capacitance: 4310pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 200 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FDA24N50F - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDA24N50F
Single FETs, MOSFETs FDA24N50F
MOSFET N-CH 500V 24A TO3PN

MOSFET N-CH 500V 24A TO3PN

Supplier's Site Datasheet
Single FETs, MOSFETs - FDA24N50F-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDA24N50F-ND
Single FETs, MOSFETs FDA24N50F-ND
N-Channel 500V 24A (Tc) 270W (Tc) Through Hole TO-3PN

N-Channel 500V 24A (Tc) 270W (Tc) Through Hole TO-3PN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA24N50F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDA24N50F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDA24N50F
MOSFET N-CH 500V 24A TO3PN

MOSFET N-CH 500V 24A TO3PN

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDA24N50F
Triode/MOS Tube/Transistor >> MOSFETs FDA24N50F
500V 24A 200mΩ@12A,10V 270W 5V@250uA null TO-3PN MOSFETs ROHS

500V 24A 200mΩ@12A,10V 270W 5V@250uA null TO-3PN MOSFETs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch

MOSFET N-Ch

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1037944-FDA24N50F FDA24N50F FDA24N50F-ND FDA24N50F FDA24N50F FDA24N50F
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50F Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts 500 volts
PD 270000 milliwatts 270000 milliwatts 270000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-3; SOT3; TO-3PN TO-3; TO-3P-3, SC-65-3 TO-3; TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3
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