onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50F FDA24N50F

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037944-FDA24N50F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 270W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 85nC @ 10V Max Input Capacitance: 4310pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 200 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Quantity per package: 450
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037944-FDA24N50F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 270W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 85nC @ 10V Max Input Capacitance: 4310pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 200 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50F - 1037944-FDA24N50F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50F
1037944-FDA24N50F
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50F 1037944-FDA24N50F
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037944-FDA24N50F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 270W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 85nC @ 10V Max Input Capacitance: 4310pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 200 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037944-FDA24N50F
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 270W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 85nC @ 10V
Max Input Capacitance: 4310pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 200 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FDA24N50F - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDA24N50F
Single FETs, MOSFETs FDA24N50F
MOSFET N-CH 500V 24A TO3PN

MOSFET N-CH 500V 24A TO3PN

Supplier's Site Datasheet
Single FETs, MOSFETs - FDA24N50F-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDA24N50F-ND
Single FETs, MOSFETs FDA24N50F-ND
N-Channel 500V 24A (Tc) 270W (Tc) Through Hole TO-3PN

N-Channel 500V 24A (Tc) 270W (Tc) Through Hole TO-3PN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA24N50F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDA24N50F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDA24N50F
MOSFET N-CH 500V 24A TO3PN

MOSFET N-CH 500V 24A TO3PN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch

MOSFET N-Ch

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDA24N50F
Triode/MOS Tube/Transistor >> MOSFETs FDA24N50F
500V 24A 200mΩ@12A,10V 270W 5V@250uA null TO-3PN MOSFETs ROHS

500V 24A 200mΩ@12A,10V 270W 5V@250uA null TO-3PN MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1037944-FDA24N50F FDA24N50F FDA24N50F-ND FDA24N50F FDA24N50F FDA24N50F
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50F Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts 500 volts
PD 270000 milliwatts 270000 milliwatts 270000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-3; SOT3; TO-3PN TO-3; TO-3P-3, SC-65-3 TO-3; TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3
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