onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50 FDA24N50

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037943-FDA24N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 270W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 85nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 450
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50 - 1037943-FDA24N50 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDA24N50-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDA24N50 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA24N50 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 49253707 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037943-FDA24N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 270W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 85nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50 - 1037943-FDA24N50 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50
1037943-FDA24N50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50 1037943-FDA24N50
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037943-FDA24N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 270W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 85nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037943-FDA24N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 270W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 85nC @ 10V
Max Input Capacitance: 4150pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FDA24N50-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDA24N50-ND
Single FETs, MOSFETs FDA24N50-ND
N-Channel 500V 24A (Tc) 270W (Tc) Through Hole TO-3PN

N-Channel 500V 24A (Tc) 270W (Tc) Through Hole TO-3PN

Buy Now Datasheet
Single FETs, MOSFETs - FDA24N50 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDA24N50
Single FETs, MOSFETs FDA24N50
MOSFET N-CH 500V 24A TO3PN

MOSFET N-CH 500V 24A TO3PN

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA24N50 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDA24N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDA24N50
MOSFET N-CH 500V 24A TO3PN

MOSFET N-CH 500V 24A TO3PN

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDA24N50
MOSFET FDA24N50
MOSFET UniFET 500V

MOSFET UniFET 500V

Buy Now Datasheet
Transistor - 49253707 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
49253707
Transistor 49253707
MOSFET, N-CH, 500V, 24A, TO-3PN-3; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:24A; DRAIN SOURCE VOLTAGE VDS:500V; ON RESISTANCE RDS(ON):0.16OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:5V; PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CH, 500V, 24A, TO-3PN-3; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:24A; DRAIN SOURCE VOLTAGE VDS:500V; ON RESISTANCE RDS(ON):0.16OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:5V; PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1037943-FDA24N50 FDA24N50-ND FDA24N50 FDA24N50 FDA24N50 49253707
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA24N50 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 500 volts 500 volts
PD 270000 milliwatts 270000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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