onsemi Single FETs, MOSFETs FDA18N50

Description
POWER FIELD-EFFECT TRANSISTOR, 1
Request a Quote Datasheet
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDA18N50 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDA18N50
Single FETs, MOSFETs FDA18N50
POWER FIELD-EFFECT TRANSISTOR, 1

POWER FIELD-EFFECT TRANSISTOR, 1

Supplier's Site Datasheet
Single FETs, MOSFETs - FDA18N50 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDA18N50
Single FETs, MOSFETs FDA18N50
MOSFET N-CH 500V 19A TO3PN

MOSFET N-CH 500V 19A TO3PN

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA18N50 - 066902-FDA18N50 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA18N50
066902-FDA18N50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA18N50 066902-FDA18N50
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066902-FDA18N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 239W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2860pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 265 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066902-FDA18N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 239W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2860pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 265 mOhm @ 9.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FDA18N50-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDA18N50-ND
Single FETs, MOSFETs FDA18N50-ND
N-Channel 500V 19A (Tc) 239W (Tc) Through Hole TO-3PN

N-Channel 500V 19A (Tc) 239W (Tc) Through Hole TO-3PN

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDA18N50
Triode/MOS Tube/Transistor >> MOSFETs FDA18N50
500V 19A 239W 265mΩ@10V,9.5A 5V@250uA N Channel TO-3P MOSFETs ROHS

500V 19A 239W 265mΩ@10V,9.5A 5V@250uA N Channel TO-3P MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDA18N50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDA18N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDA18N50
MOSFET N-CH 500V 19A TO3PN

MOSFET N-CH 500V 19A TO3PN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDA18N50
MOSFET FDA18N50
MOSFET 500V N-CH MOSFET

MOSFET 500V N-CH MOSFET

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDA18N50 066902-FDA18N50 FDA18N50-ND FDA18N50 FDA18N50 FDA18N50
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDA18N50 Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts 500 volts
IDSS 19000 milliamps
PD 239000 milliwatts 239000 milliwatts 239000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor - T2G6001528-Q3 - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-200
View Details
4 suppliers