onsemi Single FETs, MOSFETs FCU850N80Z

Description
N-Channel 800V 6A (Tc) 75W (Tc) Through Hole I-PAK
Request a Quote Datasheet
Description
N-Channel 800V 6A (Tc) 75W (Tc) Through Hole I-PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCU850N80Z-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCU850N80Z-ND
Single FETs, MOSFETs FCU850N80Z-ND
N-Channel 800V 6A (Tc) 75W (Tc) Through Hole I-PAK

N-Channel 800V 6A (Tc) 75W (Tc) Through Hole I-PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324708-FCU850N80Z - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324708-FCU850N80Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324708-FCU850N80Z
Manufacturer: onsemi Win Source Part Number: 1324708-FCU850N80Z Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 75 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 600µA Power Dissipation (Max): 75W (Tc) Supplier Device Package: I-PAK Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-251-3 Short Leads, IPak, TO-251AA ECCN: EAR99 Fake Threat In the Open Market: 81 MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: ONSFSCFCU850N80Z,215 6-FCU850N80Z-OS Base Product Number: FCU850 Product Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: onsemi
Win Source Part Number: 1324708-FCU850N80Z
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 75
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Power Dissipation (Max): 75W (Tc)
Supplier Device Package: I-PAK
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-251-3 Short Leads, IPak, TO-251AA
ECCN: EAR99
Fake Threat In the Open Market: 81
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: ONSFSCFCU850N80Z,2156-FCU850N80Z-OS
Base Product Number: FCU850
Product Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
MOSFET Transistor 278-FCU850N80Z
POWER FIELD-EFFECT TRANSISTOR Product overview: FCU850N80Z from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCU850N80Z can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR Product overview: FCU850N80Z from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCU850N80Z can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET SF3 800V 850 MOHM E IPAK

MOSFET SF3 800V 850 MOHM E IPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCU850N80Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCU850N80Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCU850N80Z
MOSFET N-CH 800V 6A IPAK

MOSFET N-CH 800V 6A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FCU850N80Z-ND 1324708-FCU850N80Z 278-FCU850N80Z FCU850N80Z FCU850N80Z
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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