The FCU600N65S3R0 is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage of 650V and a continuous drain current rating of 6A. It has a low on-resistance of 493 mOc at a gate-source voltage of 10V, which contributes to reduced conduction losses. The device is characterized by a low total gate charge of 11 nC, facilitating efficient switching performance. This MOSFET is avalanche rated and has been tested for 100% avalanche capability, making it suitable for applications that may experience transient conditions. It operates effectively in a wide temperature range from -55¬8C to +150¬8C and is compliant with RoHS standards, being both Pb-free and halogen-free. The package type is TO-251, which is suitable for various mounting configurations. Applications for this MOSFET include computing and display power supplies, telecom and server power supplies, industrial power supplies, and lighting or charger adapters. Its advanced charge balance technology helps manage electromagnetic interference (EMI) issues, making it easier to implement in designs.
Manufacturer: onsemi
Win Source Part Number: 1324339-FCU600N65S3R
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 75
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Power Dissipation (Max): 54W (Tc)
Supplier Device Package: I-PAK
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-251-3 Stub Leads, IPak
ECCN: EAR99
Fake Threat In the Open Market: 78
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FCU600N65S3R0OS,2156
Base Product Number: FCU600
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
N-Channel 650V 6A (Tc) 54W (Tc) Through Hole I-PAK
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, IPAK, 1800-TUBE Product overview: FCU600N65S3R0 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 6 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 6 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCU600N65S3R0 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 6A IPAK
MOSFET SUPERFET3 650V 6A 600 mOhm
MOSFET, N-CH, 650V, 6A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.493ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power DissipationRoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1324339-FCU600N65S3R0 | FCU600N65S3R0OS-ND | 278-FCU600N65S3R0 | FCU600N65S3R0 | FCU600N65S3R0 | 62AC6867 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | N-Channel 650 V 6 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 6A, To-251; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel | ||||
| PD | 54000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | ||||
| Package Type | SOT3; TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPAK | TO-251-3 Stub Leads, IPak | TO-3 |
