onsemi Single FETs, MOSFETs FCPF380N65FL1

Description
N-Channel 650V 10.2A (Tc) 33W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet
Description
N-Channel 650V 10.2A (Tc) 33W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCPF380N65FL1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCPF380N65FL1-ND
Single FETs, MOSFETs FCPF380N65FL1-ND
N-Channel 650V 10.2A (Tc) 33W (Tc) Through Hole TO-220F-3

N-Channel 650V 10.2A (Tc) 33W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Single FETs, MOSFETs - FCPF380N65FL1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCPF380N65FL1
Single FETs, MOSFETs FCPF380N65FL1
MOSFET N-CH 650V 10.2A TO220F

MOSFET N-CH 650V 10.2A TO220F

Supplier's Site Datasheet
Singapore
N-Channel 650 V 10.2 A 380 mohm MOSFET Transistor
2088-FCPF380N65FL1
N-Channel 650 V 10.2 A 380 mohm MOSFET Transistor 2088-FCPF380N65FL1
MOSFETs Power MOSFET, N-Channel, SUPERFET II, FRFET, 650 V, 10.2 A, 380 mohm, TO-220F Product overview: FCPF380N65FL1 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 10.2 A, 380 mohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 10.2 A, 380 mohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCPF380N65FL1 can be used for catalog matching and distributor lookup.

MOSFETs Power MOSFET, N-Channel, SUPERFET II, FRFET, 650 V, 10.2 A, 380 mohm, TO-220F Product overview: FCPF380N65FL1 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 10.2 A, 380 mohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 10.2 A, 380 mohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCPF380N65FL1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FETs - Single - FCPF380N65FL1 - 814192-FCPF380N65FL1 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FCPF380N65FL1
814192-FCPF380N65FL1
FETs - Single - FCPF380N65FL1 814192-FCPF380N65FL1
Manufacturer: ON Semiconductor Win Source Part Number: 814192-FCPF380N65FL1 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650V Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 33W (Tc) Popularity: Low Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 380mOhm at 5.1A, 10V Gate Charge (Qg) (Maximum) at Vgs: 43nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1680pF at 100V Current - Continuous Drain (Id) at 25°C: 10.2A (Tc) Vgs(th) (Maximum) at Id: 5V at 1mA Maximum Vgs: ±20V

Manufacturer: ON Semiconductor
Win Source Part Number: 814192-FCPF380N65FL1
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650V
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 33W (Tc)
Popularity: Low
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 380mOhm at 5.1A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 43nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1680pF at 100V
Current - Continuous Drain (Id) at 25°C: 10.2A (Tc)
Vgs(th) (Maximum) at Id: 5V at 1mA
Maximum Vgs: ±20V

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MOSFET N-CH 650V 10.2A TO220 - 598-FCPF380N65FL1 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 650V 10.2A TO220
598-FCPF380N65FL1
MOSFET N-CH 650V 10.2A TO220 598-FCPF380N65FL1
MOSFET N-CH 650V 10.2A TO220

MOSFET N-CH 650V 10.2A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET SF2 650V 380MOHM F TO220F

MOSFET SF2 650V 380MOHM F TO220F

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCPF380N65FL1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCPF380N65FL1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCPF380N65FL1
MOSFET N-CH 650V 10.2A TO220F

MOSFET N-CH 650V 10.2A TO220F

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FCPF380N65FL1-ND FCPF380N65FL1 2088-FCPF380N65FL1 814192-FCPF380N65FL1 598-FCPF380N65FL1 FCPF380N65FL1 FCPF380N65FL1
Product Name Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 650 V 10.2 A 380 mohm MOSFET Transistor FETs - Single - FCPF380N65FL1 MOSFET N-CH 650V 10.2A TO220 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack Tube TO-220; SOT3 TO-220; TO-220-3 Full Pack
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts
IDSS 10200 milliamps
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