onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF16N60 FCPF16N60

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015895-FCPF16N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 52.3nC @ 10V Max Input Capacitance: 2170pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 199 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015895-FCPF16N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 52.3nC @ 10V Max Input Capacitance: 2170pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 199 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF16N60 - 015895-FCPF16N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF16N60
015895-FCPF16N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF16N60 015895-FCPF16N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015895-FCPF16N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 52.3nC @ 10V Max Input Capacitance: 2170pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 199 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015895-FCPF16N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 52.3nC @ 10V
Max Input Capacitance: 2170pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 199 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FCPF16N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCPF16N60-ND
Single FETs, MOSFETs FCPF16N60-ND
N-Channel 600V 16A (Tc) 37.9W (Tc) Through Hole TO-220F-3

N-Channel 600V 16A (Tc) 37.9W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Single FETs, MOSFETs - FCPF16N60 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCPF16N60
Single FETs, MOSFETs FCPF16N60
MOSFET N-CH 600V 16A TO220F

MOSFET N-CH 600V 16A TO220F

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 600V N-CH SuperFET

MOSFET 600V N-CH SuperFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCPF16N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCPF16N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCPF16N60
MOSFET N-CH 600V 16A TO220F

MOSFET N-CH 600V 16A TO220F

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FCPF16N60
Triode/MOS Tube/Transistor >> MOSFETs FCPF16N60
600V 16A 37.9W 260mΩ@8A,10V 5V@250uA null TO-220F-3 MOSFETs ROHS

600V 16A 37.9W 260mΩ@8A,10V 5V@250uA null TO-220F-3 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 015895-FCPF16N60 FCPF16N60-ND FCPF16N60 FCPF16N60 FCPF16N60 FCPF16N60
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF16N60 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts 600 volts
PD 35700 milliwatts 37900 milliwatts 37900 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220F-3 TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220
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