onsemi Single FETs, MOSFETs FCPF16N60

Description
MOSFET N-CH 600V 16A TO220F
Request a Quote Datasheet
Description
MOSFET N-CH 600V 16A TO220F
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCPF16N60 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCPF16N60
Single FETs, MOSFETs FCPF16N60
MOSFET N-CH 600V 16A TO220F

MOSFET N-CH 600V 16A TO220F

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF16N60 - 015895-FCPF16N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF16N60
015895-FCPF16N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF16N60 015895-FCPF16N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015895-FCPF16N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 52.3nC @ 10V Max Input Capacitance: 2170pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 199 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015895-FCPF16N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 52.3nC @ 10V
Max Input Capacitance: 2170pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 199 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FCPF16N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCPF16N60-ND
Single FETs, MOSFETs FCPF16N60-ND
N-Channel 600V 16A (Tc) 37.9W (Tc) Through Hole TO-220F-3

N-Channel 600V 16A (Tc) 37.9W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCPF16N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCPF16N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCPF16N60
MOSFET N-CH 600V 16A TO220F

MOSFET N-CH 600V 16A TO220F

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 600V N-CH SuperFET

MOSFET 600V N-CH SuperFET

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FCPF16N60
Triode/MOS Tube/Transistor >> MOSFETs FCPF16N60
600V 16A 37.9W 260mΩ@8A,10V 5V@250uA null TO-220F-3 MOSFETs ROHS

600V 16A 37.9W 260mΩ@8A,10V 5V@250uA null TO-220F-3 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCPF16N60 015895-FCPF16N60 FCPF16N60-ND FCPF16N60 FCPF16N60 FCPF16N60
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF16N60 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts 600 volts
IDSS 16000 milliamps
PD 37900 milliwatts 35700 milliwatts 37900 milliwatts
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5 suppliers