onsemi Single FETs, MOSFETs FCPF13N60NT

Description
N-Channel 600V 13A (Tc) 33.8W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet
Description
N-Channel 600V 13A (Tc) 33.8W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCPF13N60NT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCPF13N60NT-ND
Single FETs, MOSFETs FCPF13N60NT-ND
N-Channel 600V 13A (Tc) 33.8W (Tc) Through Hole TO-220F-3

N-Channel 600V 13A (Tc) 33.8W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF13N60NT - 066894-FCPF13N60NT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF13N60NT
066894-FCPF13N60NT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF13N60NT 066894-FCPF13N60NT
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066894-FCPF13N60NT Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 39.5nC @ 10V Max Input Capacitance: 1765pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 258 mOhm @ 6.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066894-FCPF13N60NT
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3 (Y-Forming)
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 39.5nC @ 10V
Max Input Capacitance: 1765pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 258 mOhm @ 6.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FCPF13N60NT - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCPF13N60NT
Single FETs, MOSFETs FCPF13N60NT
MOSFET N-CH 600V 13A TO220F

MOSFET N-CH 600V 13A TO220F

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET SupreMOS 13A

MOSFET SupreMOS 13A

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FCPF13N60NT
Triode/MOS Tube/Transistor >> MOSFETs FCPF13N60NT
600V 13A 258mΩ@6.5A,10V 33.8W 4V@250uA null TO-220F-3 MOSFETs ROHS

600V 13A 258mΩ@6.5A,10V 33.8W 4V@250uA null TO-220F-3 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCPF13N60NT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCPF13N60NT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCPF13N60NT
MOSFET N-CH 600V 13A TO220F

MOSFET N-CH 600V 13A TO220F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FCPF13N60NT-ND 066894-FCPF13N60NT FCPF13N60NT FCPF13N60NT FCPF13N60NT FCPF13N60NT
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF13N60NT Single FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F-3 (Y-Forming) TO-220; TO-220-3 Full Pack TO-220 TO-220; TO-220-3 Full Pack
V(BR)DSS 600 volts 600 volts 600 volts
PD 33800 milliwatts 33800 milliwatts 33800 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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