onsemi Single FETs, MOSFETs FCPF11N60NT

Description
N-Channel 600V 10.8A (Tc) 32.1W (Tc) Through Hole TO-220F-3
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Description
N-Channel 600V 10.8A (Tc) 32.1W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCPF11N60NT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCPF11N60NT-ND
Single FETs, MOSFETs FCPF11N60NT-ND
N-Channel 600V 10.8A (Tc) 32.1W (Tc) Through Hole TO-220F-3

N-Channel 600V 10.8A (Tc) 32.1W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
MOSFET Transistor 278-FCPF11N60NT
POWER FIELD-EFFECT TRANSISTOR, 1 Product overview: FCPF11N60NT from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCPF11N60NT can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, 1 Product overview: FCPF11N60NT from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCPF11N60NT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF11N60NT - 015894-FCPF11N60NT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF11N60NT
015894-FCPF11N60NT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF11N60NT 015894-FCPF11N60NT
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015894-FCPF11N60NT Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 32.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35.6nC @ 10V Max Input Capacitance: 1505pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 299 mOhm @ 5.4A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015894-FCPF11N60NT
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 32.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35.6nC @ 10V
Max Input Capacitance: 1505pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 299 mOhm @ 5.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCPF11N60NT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCPF11N60NT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCPF11N60NT
MOSFET N-CH 600V 10.8A TO220F

MOSFET N-CH 600V 10.8A TO220F

Supplier's Site
Sheung Wan, Hong Kong
MOSFET SupreMOS 11A

MOSFET SupreMOS 11A

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Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCPF11N60NT-ND 278-FCPF11N60NT 015894-FCPF11N60NT FCPF11N60NT FCPF11N60NT
Product Name Single FETs, MOSFETs MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCPF11N60NT Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack Bulk TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack
MOSFET Operating Mode Enhancement
Transconductance 0.0135 kS
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