onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP9N60N FCP9N60N

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066892-FCP9N60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1240pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 800

600V 9A N-Channel Power MOSFET TO-220 Product overview: FCP9N60N from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP9N60N can be used for catalog matching and distributor lookup.

N-Channel 600V 9A (Tc) 83.3W (Tc) Through Hole TO-220-3