onsemi Single FETs, MOSFETs FCP9N60N

Description
N-Channel 600V 9A (Tc) 83.3W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 600V 9A (Tc) 83.3W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCP9N60N-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCP9N60N-ND
Single FETs, MOSFETs FCP9N60N-ND
N-Channel 600V 9A (Tc) 83.3W (Tc) Through Hole TO-220-3

N-Channel 600V 9A (Tc) 83.3W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP9N60N - 066892-FCP9N60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP9N60N
066892-FCP9N60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP9N60N 066892-FCP9N60N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066892-FCP9N60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 83.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1240pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066892-FCP9N60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1240pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCP9N60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCP9N60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCP9N60N
MOSFET N-CH 600V 9A TO220-3

MOSFET N-CH 600V 9A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FCP9N60N
MOSFET FCP9N60N
MOSFET SupreMOS 9A

MOSFET SupreMOS 9A

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCP9N60N-ND 066892-FCP9N60N FCP9N60N FCP9N60N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP9N60N Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3
V(BR)DSS 600 volts
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