N-Channel 800V 10A (Tc) 162W (Tc) Through Hole TO-220
MOSFET N-CH 800V 10A TO220
MOSFET, N-CH, 800V, 10A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
MOSFET 800V 10A NChn MOSFET SuperFET II
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCP650N80Z-ND | FCP650N80Z | 84Y5819 | FCP650N80Z |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 10A, To-220-3; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel |
