onsemi Single FETs, MOSFETs FCP600N60Z

Description
N-Channel 600V 7.4A (Tc) 89W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 600V 7.4A (Tc) 89W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCP600N60ZOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCP600N60ZOS-ND
Single FETs, MOSFETs FCP600N60ZOS-ND
N-Channel 600V 7.4A (Tc) 89W (Tc) Through Hole TO-220-3

N-Channel 600V 7.4A (Tc) 89W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP600N60Z - 204078-FCP600N60Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP600N60Z
204078-FCP600N60Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP600N60Z 204078-FCP600N60Z
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204078-FCP600N60Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.4A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 1120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204078-FCP600N60Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7.4A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 1120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCP600N60Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCP600N60Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCP600N60Z
MOSFET N-CH 600V 7.4A TO220-3

MOSFET N-CH 600V 7.4A TO220-3

Supplier's Site
Mosfet, N-Ch, 600V, 7.4A, To-220; Channel Type Onsemi - 63W2845 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 7.4A, To-220; Channel Type Onsemi
63W2845
Mosfet, N-Ch, 600V, 7.4A, To-220; Channel Type Onsemi 63W2845
MOSFET, N-CH, 600V, 7.4A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 7.4A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCP600N60ZOS-ND 204078-FCP600N60Z FCP600N60Z 63W2845
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP600N60Z Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 7.4A, To-220; Channel Type Onsemi
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-220; TO-220-3 TO-3; TO-220
V(BR)DSS 600 volts
PD 89000 milliwatts
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