onsemi Single FETs, MOSFETs FCP600N60Z

Description
N-Channel 600V 7.4A (Tc) 89W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 600V 7.4A (Tc) 89W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCP600N60ZOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCP600N60ZOS-ND
Single FETs, MOSFETs FCP600N60ZOS-ND
N-Channel 600V 7.4A (Tc) 89W (Tc) Through Hole TO-220-3

N-Channel 600V 7.4A (Tc) 89W (Tc) Through Hole TO-220-3

Buy Now Datasheet
MOSFET Transistor 278-FCP600N60Z
POWER FIELD-EFFECT TRANSISTOR, N Product overview: FCP600N60Z from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP600N60Z can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, N Product overview: FCP600N60Z from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP600N60Z can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP600N60Z - 204078-FCP600N60Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP600N60Z
204078-FCP600N60Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP600N60Z 204078-FCP600N60Z
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204078-FCP600N60Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.4A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 1120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204078-FCP600N60Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7.4A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 1120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Mosfet, N-Ch, 600V, 7.4A, To-220; Channel Type Onsemi - 63W2845 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 7.4A, To-220; Channel Type Onsemi
63W2845
Mosfet, N-Ch, 600V, 7.4A, To-220; Channel Type Onsemi 63W2845
MOSFET, N-CH, 600V, 7.4A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 7.4A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCP600N60Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCP600N60Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCP600N60Z
MOSFET N-CH 600V 7.4A TO220-3

MOSFET N-CH 600V 7.4A TO220-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FCP600N60ZOS-ND 278-FCP600N60Z 204078-FCP600N60Z 63W2845 FCP600N60Z
Product Name Single FETs, MOSFETs MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP600N60Z Mosfet, N-Ch, 600V, 7.4A, To-220; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Bulk TO-220; SOT3; TO-220 TO-3; TO-220 TO-220; TO-220-3
MOSFET Operating Mode Enhancement
Transconductance 0.0067 kS
PD 89 milliwatts 89000 milliwatts
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