onsemi Single FETs, MOSFETs FCP360N65S3R0

N-Channel 650V 10A (Tc) 83W (Tc) Through Hole TO-220-3

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, TO-220, 800-TUBE Product overview: FCP360N65S3R0 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 10 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 10 A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP360N65S3R0 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1017246-FCP360N65S3R0
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperFET® III
Package: Tube
Standard Package: 800
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 83W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 2156-FCP360N65S3R0-488
Base Product Number: FCP360
Drive Voltage (Max Rds On, Min Rds On): 10V