onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP260N60E FCP260N60E

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204075-FCP260N60E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 156W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 62nC @ 10V Max Input Capacitance: 2500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 260 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Quantity per package: 800
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204075-FCP260N60E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 156W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 62nC @ 10V Max Input Capacitance: 2500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 260 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP260N60E - 204075-FCP260N60E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP260N60E
204075-FCP260N60E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP260N60E 204075-FCP260N60E
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204075-FCP260N60E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 156W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 62nC @ 10V Max Input Capacitance: 2500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 260 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204075-FCP260N60E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 156W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 2500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 260 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FCP260N60EOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCP260N60EOS-ND
Single FETs, MOSFETs FCP260N60EOS-ND
N-Channel 600V 15A (Tc) 156W (Tc) Through Hole TO-220-3

N-Channel 600V 15A (Tc) 156W (Tc) Through Hole TO-220-3

Buy Now Datasheet
MOSFET Transistor 278-FCP260N60E
POWER FIELD-EFFECT TRANSISTOR, N Product overview: FCP260N60E from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP260N60E can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, N Product overview: FCP260N60E from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP260N60E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCP260N60E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCP260N60E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCP260N60E
MOSFET N-CH 600V 15A TO220-3

MOSFET N-CH 600V 15A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 204075-FCP260N60E FCP260N60EOS-ND 278-FCP260N60E FCP260N60E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP260N60E Single FETs, MOSFETs MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 156000 milliwatts 156 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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