onsemi Single FETs, MOSFETs FCP20N60

Description
N-Channel 600V 20A (Tc) 208W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 600V 20A (Tc) 208W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCP20N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCP20N60-ND
Single FETs, MOSFETs FCP20N60-ND
N-Channel 600V 20A (Tc) 208W (Tc) Through Hole TO-220-3

N-Channel 600V 20A (Tc) 208W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP20N60 - 001070-FCP20N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP20N60
001070-FCP20N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP20N60 001070-FCP20N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001070-FCP20N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 208W (Tc) Family Name: FCP20N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 3080pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): TK16E60W,S1VX(S; TK20E60U,S1X(S; STP18N65M5; TK20E60U; Introduction Date: February 04, 2005 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001070-FCP20N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Family Name: FCP20N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 3080pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): TK16E60W,S1VX(S; TK20E60U,S1X(S; STP18N65M5; TK20E60U;
Introduction Date: February 04, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FCP20N60 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCP20N60
Single FETs, MOSFETs FCP20N60
MOSFET N-CH 600V 20A TO220-3

MOSFET N-CH 600V 20A TO220-3

Supplier's Site Datasheet
Transistor - 16119626 - Radwell International
Willingboro, NJ, United States
Transistor
16119626
Transistor 16119626
N CHANNEL MOSFET, 600V, 20A, TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:20A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):0.15OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:5V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 600V, 20A, TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:20A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):0.15OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:5V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
N Channel Mosfet, 600V, 20A, To-220; Channel Type Onsemi - 31K6749 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 20A, To-220; Channel Type Onsemi
31K6749
N Channel Mosfet, 600V, 20A, To-220; Channel Type Onsemi 31K6749
N CHANNEL MOSFET, 600V, 20A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 20A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCP20N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCP20N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCP20N60
MOSFET N-CH 600V 20A TO220-3

MOSFET N-CH 600V 20A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FCP20N60
MOSFET FCP20N60
MOSFET 600V N-Channel SuperFET

MOSFET 600V N-Channel SuperFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Radwell International Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCP20N60-ND 001070-FCP20N60 FCP20N60 16119626 31K6749 FCP20N60 FCP20N60
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP20N60 Single FETs, MOSFETs Transistor N Channel Mosfet, 600V, 20A, To-220; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-3; TO-220 TO-220; TO-220-3
V(BR)DSS 600 volts 600 volts
PD 208000 milliwatts 208000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor - QPD0020 - Qorvo
Specs
Transistor Technology / Material DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF1018ES - 1020697-AUIRF1018ES - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 110000 milliwatts
View Details
4 suppliers