onsemi Single FETs, MOSFETs FCP190N60E

POWER MOSFET, N-CHANNEL, SUPERFE

MOSFET N-Ch 600V 20A SuperFET-II TO220

MOSFET N-Ch 600V 20A SuperFET-II TO220

MOSFET N-Ch 600V 20A SuperFET-II TO220

N-Channel 600V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3

MOSFETs 600V N-CHAN MOSFET Product overview: FCP190N60E from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCP190N60E can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204072-FCP190N60E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20.6A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 3175pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): SPP20N60C3; R6520KNX1C10; IXKP20N60C5;
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Quantity per package: 800