onsemi FETs - Single - FCP170N60 FCP170N60

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173620-FCP170N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 227W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 170mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 55nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2860pF at 380V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173620-FCP170N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 227W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 170mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 55nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2860pF at 380V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FCP170N60 - 1173620-FCP170N60 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FCP170N60
1173620-FCP170N60
FETs - Single - FCP170N60 1173620-FCP170N60
Manufacturer: ON Semiconductor Win Source Part Number: 1173620-FCP170N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 227W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 170mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 55nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2860pF at 380V

Manufacturer: ON Semiconductor
Win Source Part Number: 1173620-FCP170N60
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 227W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 22A
Rds On (Maximum) at Id, Vgs: 170mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 55nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2860pF at 380V

Buy Now
Single FETs, MOSFETs - FCP170N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCP170N60-ND
Single FETs, MOSFETs FCP170N60-ND
N-Channel 600V 22A (Tc) 227W (Tc) Through Hole TO-220-3

N-Channel 600V 22A (Tc) 227W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore, Singapore
N-Channel 600 V 22 A TO-220 MOSFET Transistor
278-FCP170N60
N-Channel 600 V 22 A TO-220 MOSFET Transistor 278-FCP170N60
Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-220, 800-TUBE Product overview: FCP170N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 22 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 22 A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP170N60 can be used for catalog matching and distributor lookup.

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-220, 800-TUBE Product overview: FCP170N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 22 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 22 A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP170N60 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCP170N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCP170N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCP170N60
MOSFET N-CH 600V 22A TO220-3

MOSFET N-CH 600V 22A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET SF2 600V 170MOHM F TO220

MOSFET SF2 600V 170MOHM F TO220

Buy Now Datasheet
MOSFET HV SuperJunction MOS - 598-FCP170N60 - Utmel Electronic Limited
Hong Kong, China
MOSFET HV SuperJunction MOS
598-FCP170N60
MOSFET HV SuperJunction MOS 598-FCP170N60
MOSFET HV SuperJunction MOS

MOSFET HV SuperJunction MOS

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1173620-FCP170N60 FCP170N60-ND 278-FCP170N60 FCP170N60 FCP170N60 598-FCP170N60
Product Name FETs - Single - FCP170N60 Single FETs, MOSFETs N-Channel 600 V 22 A TO-220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET HV SuperJunction MOS
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 227000 milliwatts 227000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3
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