onsemi FETs - Single - FCP170N60 FCP170N60

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173620-FCP170N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 227W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 170mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 55nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2860pF at 380V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173620-FCP170N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 227W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 170mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 55nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2860pF at 380V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FCP170N60 - 1173620-FCP170N60 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FCP170N60
1173620-FCP170N60
FETs - Single - FCP170N60 1173620-FCP170N60
Manufacturer: ON Semiconductor Win Source Part Number: 1173620-FCP170N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 227W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 170mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 55nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2860pF at 380V

Manufacturer: ON Semiconductor
Win Source Part Number: 1173620-FCP170N60
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 227W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 22A
Rds On (Maximum) at Id, Vgs: 170mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 55nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2860pF at 380V

Buy Now
Single FETs, MOSFETs - FCP170N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCP170N60-ND
Single FETs, MOSFETs FCP170N60-ND
N-Channel 600V 22A (Tc) 227W (Tc) Through Hole TO-220-3

N-Channel 600V 22A (Tc) 227W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCP170N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCP170N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCP170N60
MOSFET N-CH 600V 22A TO220-3

MOSFET N-CH 600V 22A TO220-3

Supplier's Site
MOSFET HV SuperJunction MOS - 598-FCP170N60 - Utmel Electronic Limited
Hong Kong, China
MOSFET HV SuperJunction MOS
598-FCP170N60
MOSFET HV SuperJunction MOS 598-FCP170N60
MOSFET HV SuperJunction MOS

MOSFET HV SuperJunction MOS

Supplier's Site
Sheung Wan, Hong Kong
MOSFET SF2 600V 170MOHM F TO220

MOSFET SF2 600V 170MOHM F TO220

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1173620-FCP170N60 FCP170N60-ND FCP170N60 598-FCP170N60 FCP170N60
Product Name FETs - Single - FCP170N60 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET HV SuperJunction MOS MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 227000 milliwatts 227000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3
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