N-Channel 650V 24A (Tc) 181W (Tc) Through Hole TO-220-3
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, TO-220, 800-TUBE Product overview: FCP125N65S3 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 24 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 24 A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP125N65S3 can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 871559-FCP125N65S3
Series: SuperFET® III
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 24A (Tc) 181W (Tc) Through Hole TO-220-3
Package: TO-220-3
Package: Reel - TR
Mounting: Through Hole
Family Name: FCP125
Categories: Discrete Semiconductor Products
Case / Package: TO-220-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 49 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 650V 24A TO220-3
MOSFET SF3 650V 125MOHM E TO220
650V 24A 105mΩ@10V,12A 181W 4.5V@2.4mA N Channel TO-220 MOSFETs ROHS
MOSFET N-CH 650V 24A TO220-3
MOSFET, N-CH, 650V, 24A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 488-FCP125N65S3-ND | 278-FCP125N65S3 | 871559-FCP125N65S3 | FCP125N65S3 | FCP125N65S3 | FCP125N65S3 | FCP125N65S3 | 33AC5045 |
| Product Name | Single FETs, MOSFETs | N-Channel 650 V 24 A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP125N65S3 | Single FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 24A, To-220-3; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-220 | TO-220; TO-220-3 | TO-3; TO-220 | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 650 volts | 650 volts |
