MOSFET N-CH 600V 29A TO220-3
N-Channel 600V 29A (Tc) 278W (Tc) Through Hole TO-220-3
MOSFETs 600V 29A N-Chnl SuperFET Easy-Drive Product overview: FCP125N60E from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 29A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCP125N60E can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 29A TO220-3
MOSFET, N-CH, 600V, 29A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET 600V 29A N-Chnl SuperFET Easy-Drive
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCP125N60E | FCP125N60E-ND | 2088-FCP125N60E | FCP125N60E | 84Y5815 | FCP125N60E |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 600V 29A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 29A, To-220-3; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 600 volts | |||||
| IDSS | 29000 milliamps | 29000 milliamps | ||||
| PD | 278000 milliwatts | 278 milliwatts |
