The FCP11N60F is an N-Channel SuperFET¬Æ MOSFET designed for high voltage applications, featuring a maximum drain-source voltage of 600 V and a continuous drain current of 11 A at 25¬8C. It has a low on-resistance of 320 mOc at a gate-source voltage of 10 V, which helps minimize conduction losses. The device is characterized by a fast recovery time of 120 ns and an ultra-low gate charge of 40 nC, making it suitable for efficient switching applications. This MOSFET is rated for a maximum power dissipation of 125 W and operates within a temperature range of -55¬8C to +150¬8C. It is packaged in a TO-220 case, facilitating through-hole mounting. The FCP11N60F is RoHS compliant and has been 100% avalanche tested, ensuring reliability in demanding applications such as power supplies, solar inverters, and industrial power systems.
N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3
MOSFET N-CH 600V 11A TO220-3
MOSFETs 600V NCH MOSFET Product overview: FCP11N60F from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCP11N60F can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001067-FCP11N60F
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 1490pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): STP10NM60ND; FCP11N60F_NL; FCP7N60_F080;
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
MOSFET N-CH 600V 11A TO220-3
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCP11N60FFS-ND | FCP11N60F | 2088-FCP11N60F | 001067-FCP11N60F | FCP11N60F | FCP11N60F |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 600V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP11N60F | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | Tube | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 600 volts | 600 volts | ||||
| IDSS | 11000 milliamps |
