onsemi Single FETs, MOSFETs FCP11N60

Description
MOSFET N-CH 600V 11A TO220-3
Request a Quote Datasheet
Description
MOSFET N-CH 600V 11A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCP11N60 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCP11N60
Single FETs, MOSFETs FCP11N60
MOSFET N-CH 600V 11A TO220-3

MOSFET N-CH 600V 11A TO220-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP11N60 - 066891-FCP11N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP11N60
066891-FCP11N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP11N60 066891-FCP11N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066891-FCP11N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Family Name: FCP11N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 1490pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): STP13NM60ND; SPP11N60C3HKSA1; SPP11N60S5X; Introduction Date: December 01, 2003 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066891-FCP11N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: FCP11N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 1490pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): STP13NM60ND; SPP11N60C3HKSA1; SPP11N60S5X;
Introduction Date: December 01, 2003
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FCP11N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCP11N60-ND
Single FETs, MOSFETs FCP11N60-ND
N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3

N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3

Buy Now Datasheet
N Channel Mosfet, 600V, 11A, To-220; Channel Type Onsemi - 50H4189 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 11A, To-220; Channel Type Onsemi
50H4189
N Channel Mosfet, 600V, 11A, To-220; Channel Type Onsemi 50H4189
N CHANNEL MOSFET, 600V, 11A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 11A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FCP11N60
MOSFET FCP11N60
MOSFET 600V 11A N-CH

MOSFET 600V 11A N-CH

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCP11N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCP11N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCP11N60
MOSFET N-CH 600V 11A TO220-3

MOSFET N-CH 600V 11A TO220-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FCP11N60 066891-FCP11N60 FCP11N60-ND 50H4189 FCP11N60 FCP11N60
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP11N60 Single FETs, MOSFETs N Channel Mosfet, 600V, 11A, To-220; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 11000 milliamps 11000 milliamps
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5 suppliers