onsemi N-Channel 600 V 37 A TO-220 MOSFET Transistor FCP104N60

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 37 A, 104 mΩ, TO-220, 800-TUBE Product overview: FCP104N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 37 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 37 A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCP104N60 can be used for catalog matching and distributor lookup.

N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-220-3

POWER FIELD-EFFECT TRANSISTOR, 3

Win Source Part Number: 995965-FCP104N60
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperFET® II
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 357W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 380 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: FCP104N60OS,FCP104N60-ND
Base Product Number: FCP104
Drive Voltage (Max Rds On, Min Rds On): 10V