MOSFET N-CH 600V 12A POWER88
N-Channel 600V 12A (Ta) 125W (Tc) Surface Mount Power88
N-Channel 600V 12A (Ta) 125W (Tc) Surface Mount Power88
N-Channel 600V 12A (Ta) 125W (Tc) Surface Mount Power88
Manufacturer: ON Semiconductor
Win Source Part Number: 871556-FCMT299N60
Series: SuperFET® II
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 12A (Ta) 125W (Tc) Surface Mount Power88
Package: 4-PowerTSFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: FCMT299
Categories: Discrete Semiconductor Products
Case / Package: Power88
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 33 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FCMT299N60DKR, FCMT299N60TR, FCMT299N60CT
MOSFET, N-CH, 12A, 600V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation RoHS Compliant: Yes
MOSFET HV SuperJunction MOS
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| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCMT299N60 | FCMT299N60TR-ND | 871556-FCMT299N60 | 99AC9139 | 598-FCMT299N60 | FCMT299N60 | FCMT299N60 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCMT299N60 | Mosfet, N-Ch, 12A, 600V, Pqfn; Transistor Polarity Onsemi | MOSFET HV SuperJunction MOS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| IDSS | 12000 milliamps | 12000 milliamps | |||||
| PD | 125000 milliwatts | 125000 milliwatts |
