Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 250 mΩ, Power88, 3000-REEL Product overview: FCMT250N65S3 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 12 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 12 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCMT250N65S3 can be used for catalog matching and distributor lookup.
N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount Power88
N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount Power88
N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount Power88
Win Source Part Number: 1058684-FCMT250N65S3
Category: Discrete Semiconductor Products>Transistors
Series: SuperFET® III
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Power Dissipation (Max): 90W (Tc)
Package / Case: 4-PowerTSFN
Supplier Device Package: Power88
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: FCMT250N65S3OSCT,FCM
Base Product Number: FCMT250
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 12A POWER88
MOSFET, N-CH, 650V, 12A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation RoHS Compliant: Yes
MOSFET SUPERFET3 650V 12A 250 mOhm
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FCMT250N65S3 | 1784657 | 1784657P | FCMT250N65S3OSDKR-ND | 1058684-FCMT250N65S3 | FCMT250N65S3 | 62AC6861 | FCMT250N65S3 |
| Product Name | N-Channel 650 V 12 A MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 12A, Pqfn; Transistor Polarity Onsemi | MOSFET |
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Polarity | N-Channel | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | |||||||
| Package Type | Power88 | Power88 | 4-PowerTSFN | SOT3 | Power88 | TO-3 | ||
| Number of units in IC | 1 |
