MOSFET N-CH 650V 17A POWER88
Manufacturer: onsemi
Win Source Part Number: 1324744-FCMT180N65S3
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.8mA
Power Dissipation (Max): 139W (Tc)
Supplier Device Package: Power88
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 4-PowerTSFN
ECCN: EAR99
Fake Threat In the Open Market: 76
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FCMT180N65S3OSTR,FCM
Base Product Number: FCMT180
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 17 A, 180 mΩ, Power88, 3000-REEL Product overview: FCMT180N65S3 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 17 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 17 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCMT180N65S3 can be used for catalog matching and distributor lookup.
N-Channel 650V 17A (Tc) 139W (Tc) Surface Mount Power88
N-Channel 650V 17A (Tc) 139W (Tc) Surface Mount Power88
N-Channel 650V 17A (Tc) 139W (Tc) Surface Mount Power88
MOSFET, N-CH, 650V, 17A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.152ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 650V 17A POWER88
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FCMT180N65S3 | 1324744-FCMT180N65S3 | 278-FCMT180N65S3 | FCMT180N65S3OSTR-ND | 62AC6860 | FCMT180N65S3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 650 V 17 A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 17A, Pqfn; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | |||||
| IDSS | 17000 milliamps | 17000 milliamps | ||||
| PD | 139000 milliwatts | 139000 milliwatts |
