Manufacturer: onsemi
Win Source Part Number: 1324744-FCMT180N65S3
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.8mA
Power Dissipation (Max): 139W (Tc)
Supplier Device Package: Power88
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 4-PowerTSFN
ECCN: EAR99
Fake Threat In the Open Market: 76
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FCMT180N65S3OSTR,FCM
Base Product Number: FCMT180
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 650V 17A POWER88
N-Channel 650V 17A (Tc) 139W (Tc) Surface Mount Power88
N-Channel 650V 17A (Tc) 139W (Tc) Surface Mount Power88
N-Channel 650V 17A (Tc) 139W (Tc) Surface Mount Power88
MOSFET N-CH 650V 17A POWER88
MOSFET, N-CH, 650V, 17A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.152ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power DissipationRoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1324744-FCMT180N65S3 | FCMT180N65S3 | FCMT180N65S3OSTR-ND | FCMT180N65S3 | 62AC6860 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 17A, Pqfn; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 139000 milliwatts | 139000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3; 4-PowerTSFN | 4-PowerTSFN | 4-PowerTSFN | 4-PowerTSFN | TO-3 |
| Packing Method | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
