The FCMT099N65S3 is a high-voltage N-channel MOSFET from the SUPERFET III series, designed for power applications. It features a maximum drain-to-source voltage (VDSS) of 650 V and a continuous drain current (ID) rating of 30 A at 25¬8C. The device has a low on-resistance (RDS(on)) of 99 mOc at a gate-source voltage (VGS) of 10 V and a drain current of 15 A, which contributes to reduced conduction losses. This MOSFET is packaged in a compact Power88 surface-mount package, measuring 8x8 mm and 1 mm in height, making it suitable for applications with space constraints. It is rated for a maximum power dissipation of 227 W and operates within a temperature range of -55¬8C to +150¬8C. The device also exhibits low gate charge (Qg) of 56 nC, enhancing its switching performance, which is critical for applications such as telecom power supplies, industrial power supplies, and solar inverters. The FCMT099N65S3 is 100% avalanche tested and complies with RoHS standards, ensuring it meets environmental regulations. Its moisture sensitivity level is rated at MSL 1, indicating it can be handled without special precautions. Overall, this MOSFET is well-suited for high-efficiency power management in demanding applications.
MOSFET N-CH 650V 30A POWER88
N-Channel 650V 30A (Tc) 227W (Tc) Surface Mount Power88
N-Channel 650V 30A (Tc) 227W (Tc) Surface Mount Power88
N-Channel 650V 30A (Tc) 227W (Tc) Surface Mount Power88
Manufacturer: onsemi
Win Source Part Number: 1324729-FCMT099N65S3
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Power Dissipation (Max): 227W (Tc)
Supplier Device Package: Power88
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 4-PowerTSFN
ECCN: EAR99
Fake Threat In the Open Market: 67
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: ,488-FCMT099N65S3CT,
Base Product Number: FCMT099
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET PQFN88 PKG, 99mohm 650V, SuperFET3
MOSFET N-CH 650V 30A POWER88
MOSFET, N-CH, 650V, 30A, PQFN-4; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.087ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCMT099N65S3 | 488-FCMT099N65S3DKR-ND | 1324729-FCMT099N65S3 | FCMT099N65S3 | FCMT099N65S3 | 27AC5646 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 30A, Pqfn-4; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | |||||
| IDSS | 30000 milliamps | 30000 milliamps | ||||
| PD | 227000 milliwatts | 227000 milliwatts |
