onsemi Single FETs, MOSFETs FCMT099N65S3

The FCMT099N65S3 is a high-voltage N-channel MOSFET from the SUPERFET III series, designed for power applications. It features a maximum drain-to-source voltage (VDSS) of 650 V and a continuous drain current (ID) rating of 30 A at 25¬8C. The device has a low on-resistance (RDS(on)) of 99 mOc at a gate-source voltage (VGS) of 10 V and a drain current of 15 A, which contributes to reduced conduction losses. This MOSFET is packaged in a compact Power88 surface-mount package, measuring 8x8 mm and 1 mm in height, making it suitable for applications with space constraints. It is rated for a maximum power dissipation of 227 W and operates within a temperature range of -55¬8C to +150¬8C. The device also exhibits low gate charge (Qg) of 56 nC, enhancing its switching performance, which is critical for applications such as telecom power supplies, industrial power supplies, and solar inverters. The FCMT099N65S3 is 100% avalanche tested and complies with RoHS standards, ensuring it meets environmental regulations. Its moisture sensitivity level is rated at MSL 1, indicating it can be handled without special precautions. Overall, this MOSFET is well-suited for high-efficiency power management in demanding applications.