onsemi 600V 11A MOSFET Transistor FCI11N60

MOSFET N-CH 600V 11A I2PAK Product overview: FCI11N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCI11N60 can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1173612-FCI11N60
Series: SuperFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Part Status: Obsolete(EOL)
Family Name: FCI11N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 52nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1490pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): STB11NM60FD-1; STB11NM60-1; IPI60R380C6;
Introduction Date: July 01, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

N-Channel 600V 11A (Tc) 125W (Tc) Through Hole I2PAK (TO-262)