onsemi N-Channel 600V 47A MOSFET Transistor FCH47N60

Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Rail / 600V N-Channel MOSFET | MOSFET N-CH 600V 47A TO-247 Product overview: FCH47N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 47A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 47A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCH47N60 can be used for catalog matching and distributor lookup.

N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-247-3

Manufacturer: ON Semiconductor
Win Source Part Number: 1173603-FCH47N60
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: FCH47N60
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 417W
Alternative Parts (Cross-Reference): STW47NM60; AOK53S60; MMQ60R070PTH; AOK53S60L;
Introduction Date: September 14, 2004
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Family Part Number: FCH47N60
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 47A
Rds On (Maximum) at Id, Vgs: 70mOhm at 23.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 270nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 8000pF at 25V