onsemi Single FETs, MOSFETs FCH22N60N

Description
MOSFET N-CH 600V 22A TO247-3
Request a Quote Datasheet
Description
MOSFET N-CH 600V 22A TO247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCH22N60N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCH22N60N
Single FETs, MOSFETs FCH22N60N
MOSFET N-CH 600V 22A TO247-3

MOSFET N-CH 600V 22A TO247-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH22N60N - 1037880-FCH22N60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH22N60N
1037880-FCH22N60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH22N60N 1037880-FCH22N60N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037880-FCH22N60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 205W (Tc) Family Name: FCH22N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1950pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 165 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): STW26NM60N-H; STW20N65M5; STW26NM60-H; STW18N65M5; Introduction Date: April 30, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037880-FCH22N60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 205W (Tc)
Family Name: FCH22N60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1950pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 165 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): STW26NM60N-H; STW20N65M5; STW26NM60-H; STW18N65M5;
Introduction Date: April 30, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FCH22N60N-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH22N60N-ND
Single FETs, MOSFETs FCH22N60N-ND
N-Channel 600V 22A (Tc) 205W (Tc) Through Hole TO-247-3

N-Channel 600V 22A (Tc) 205W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET SUPREMOS 22A-TO247

MOSFET SUPREMOS 22A-TO247

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH22N60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH22N60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH22N60N
MOSFET N-CH 600V 22A TO247-3

MOSFET N-CH 600V 22A TO247-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FCH22N60N 1037880-FCH22N60N FCH22N60N-ND FCH22N60N FCH22N60N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH22N60N Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 22000 milliamps
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