MOSFET N-CH 650V 35A TO247 Product overview: FCH110N65F-F155 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCH110N65F-F155 can be used for catalog matching and distributor lookup.
N-Channel 650V 35A (Tc) 357W (Tc) Through Hole TO-247-3
Win Source Part Number: 1007989-FCH110N65F-F
Category: Discrete Semiconductor Products>Transistors
Series: FRFET®, SuperFET® II
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Power Dissipation (Max): 357W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
HTSUS: 8541.29.0095
Mfr: Fairchild Semiconductor
Other Names: 2156-FCH110N65F-F155
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET SuperFET2 650V, 110 mOhm, FRFET
MOSFET N-CH 650V 35A TO247
MOSFET N-CH 650V 35A TO247
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-FCH110N65F-F155 | FCH110N65F-F155-ND | 1007989-FCH110N65F-F155 | FCH110N65F-F155 | FCH110N65F-F155 | FCH110N65F-F155 |
| Product Name | 650V 35A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0300 kS | |||||
| PD | 357 milliwatts | 357000 milliwatts | 357000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |