onsemi Single FETs, MOSFETs FCH104N60F

Description
MOSFET N-CH 600V 37A TO247-3
Request a Quote Datasheet
Description
MOSFET N-CH 600V 37A TO247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCH104N60F - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCH104N60F
Single FETs, MOSFETs FCH104N60F
MOSFET N-CH 600V 37A TO247-3

MOSFET N-CH 600V 37A TO247-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH104N60F - 132737-FCH104N60F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH104N60F
132737-FCH104N60F
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH104N60F 132737-FCH104N60F
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 132737-FCH104N60F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 357W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 37A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 139nC @ 10V Max Input Capacitance: 4302pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 104 mOhm @ 18.5A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 132737-FCH104N60F
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 357W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 37A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 139nC @ 10V
Max Input Capacitance: 4302pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 104 mOhm @ 18.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FCH104N60F-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH104N60F-ND
Single FETs, MOSFETs FCH104N60F-ND
N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-247-3

N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH104N60F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH104N60F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH104N60F
MOSFET N-CH 600V 37A TO247-3

MOSFET N-CH 600V 37A TO247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Channel SuperFET

MOSFET N-Channel SuperFET

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCH104N60F 132737-FCH104N60F FCH104N60F-ND FCH104N60F FCH104N60F
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH104N60F Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 37000 milliamps
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