onsemi FETs - Single - FCH104N60 FCH104N60

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173585-FCH104N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 357W Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 450 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 37A Rds On (Maximum) at Id, Vgs: 104mOhm at 18.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 82nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4165pF at 380V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173585-FCH104N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 357W Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 450 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 37A Rds On (Maximum) at Id, Vgs: 104mOhm at 18.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 82nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4165pF at 380V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FCH104N60 - 1173585-FCH104N60 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FCH104N60
1173585-FCH104N60
FETs - Single - FCH104N60 1173585-FCH104N60
Manufacturer: ON Semiconductor Win Source Part Number: 1173585-FCH104N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 357W Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 450 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 37A Rds On (Maximum) at Id, Vgs: 104mOhm at 18.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 82nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4165pF at 380V

Manufacturer: ON Semiconductor
Win Source Part Number: 1173585-FCH104N60
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 357W
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 37A
Rds On (Maximum) at Id, Vgs: 104mOhm at 18.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 82nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 4165pF at 380V

Buy Now
Singapore, Singapore
N-Channel 600 V 37 A MOSFET Transistor
278-FCH104N60
N-Channel 600 V 37 A MOSFET Transistor 278-FCH104N60
Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 37 A, 104 mΩ, TO-247, 450-TUBE Product overview: FCH104N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 37 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 37 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCH104N60 can be used for catalog matching and distributor lookup.

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 37 A, 104 mΩ, TO-247, 450-TUBE Product overview: FCH104N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 37 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 37 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCH104N60 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FCH104N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH104N60-ND
Single FETs, MOSFETs FCH104N60-ND
N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-247-3

N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-247-3

Buy Now Datasheet
 - FCH104N60 - Rochester Electronics
Newburyport, MA, United States
FCH104N60 - N-Channel SuperFETII MOSFET

FCH104N60 - N-Channel SuperFETII MOSFET

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET SuperFET2 600V Fast ver

MOSFET SuperFET2 600V Fast ver

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH104N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH104N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH104N60
MOSFET N-CH 600V 37A TO247-3

MOSFET N-CH 600V 37A TO247-3

Supplier's Site
Single FETs, MOSFETs - FCH104N60 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCH104N60
Single FETs, MOSFETs FCH104N60
MOSFET N-CH 600V 37A TO247-3

MOSFET N-CH 600V 37A TO247-3

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Rochester Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1173585-FCH104N60 278-FCH104N60 FCH104N60-ND FCH104N60 FCH104N60 FCH104N60 FCH104N60
Product Name FETs - Single - FCH104N60 N-Channel 600 V 37 A MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
PD 357000 milliwatts 357000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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