onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FCH085N80-F155

Description
Win Source Part Number: 1031067-FCH085N80-F1 55 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® II Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Super Junction Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4.6mA Power Dissipation (Max): 446W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10825 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW56N60DM2; SPW55N80C3FKSA1; STW55NM60ND; STW69N65M5; IPW60R040C7XKSA1; IPW60R070P6XKSA1FCH0 85N80F155; FCH085N80_F155; ECCN: EAR99 Fake Threat In the Open Market: 82 pct. HTSUS: 8542.39.0001 Mfr: Fairchild Semiconductor Other Names: 2156-FCH085N80-F155, ONSFSCFCH085N80-F155 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1031067-FCH085N80-F1 55 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® II Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Super Junction Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4.6mA Power Dissipation (Max): 446W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10825 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW56N60DM2; SPW55N80C3FKSA1; STW55NM60ND; STW69N65M5; IPW60R040C7XKSA1; IPW60R070P6XKSA1FCH0 85N80F155; FCH085N80_F155; ECCN: EAR99 Fake Threat In the Open Market: 82 pct. HTSUS: 8542.39.0001 Mfr: Fairchild Semiconductor Other Names: 2156-FCH085N80-F155, ONSFSCFCH085N80-F155 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1031067-FCH085N80-F155 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1031067-FCH085N80-F155
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1031067-FCH085N80-F155
Win Source Part Number: 1031067-FCH085N80-F1 55 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperFET® II Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Super Junction Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4.6mA Power Dissipation (Max): 446W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10825 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW56N60DM2; SPW55N80C3FKSA1; STW55NM60ND; STW69N65M5; IPW60R040C7XKSA1; IPW60R070P6XKSA1FCH0 85N80F155; FCH085N80_F155; ECCN: EAR99 Fake Threat In the Open Market: 82 pct. HTSUS: 8542.39.0001 Mfr: Fairchild Semiconductor Other Names: 2156-FCH085N80-F155, ONSFSCFCH085N80-F155 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1031067-FCH085N80-F155
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperFET® II
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 4.6mA
Power Dissipation (Max): 446W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10825 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STW56N60DM2; SPW55N80C3FKSA1; STW55NM60ND; STW69N65M5; IPW60R040C7XKSA1; IPW60R070P6XKSA1FCH085N80F155; FCH085N80_F155;
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
HTSUS: 8542.39.0001
Mfr: Fairchild Semiconductor
Other Names: 2156-FCH085N80-F155,ONSFSCFCH085N80-F155
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - FCH085N80-F155-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH085N80-F155-ND
Single FETs, MOSFETs FCH085N80-F155-ND
N-Channel 800V 46A (Tc) 446W (Tc) Through Hole TO-247-3

N-Channel 800V 46A (Tc) 446W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Singapore
800V MOSFET Transistor
2088-FCH085N80-F155
800V MOSFET Transistor 2088-FCH085N80-F155
MOSFETs SuperFET2 800V Product overview: FCH085N80-F155 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCH085N80-F155 can be used for catalog matching and distributor lookup.

MOSFETs SuperFET2 800V Product overview: FCH085N80-F155 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCH085N80-F155 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH085N80-F155 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH085N80-F155
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH085N80-F155
MOSFET N-CH 800V 46A TO247

MOSFET N-CH 800V 46A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET SuperFET2 800V

MOSFET SuperFET2 800V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1031067-FCH085N80-F155 FCH085N80-F155-ND 2088-FCH085N80-F155 FCH085N80-F155 FCH085N80-F155
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs 800V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel
PD 446000 milliwatts 446 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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