Win Source Part Number: 1031067-FCH085N80-F1
Category: Discrete Semiconductor Products>Transistors
Series: SuperFET® II
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 4.6mA
Power Dissipation (Max): 446W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10825 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STW56N60DM2; SPW55N80C3FKSA1; STW55NM60ND; STW69N65M5; IPW60R040C7XKSA1; IPW60R070P6XKSA1FCH0
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
HTSUS: 8542.39.0001
Mfr: Fairchild Semiconductor
Other Names: 2156-FCH085N80-F155,
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 800V 46A (Tc) 446W (Tc) Through Hole TO-247-3
MOSFETs SuperFET2 800V Product overview: FCH085N80-F155 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCH085N80-F155 can be used for catalog matching and distributor lookup.
MOSFET N-CH 800V 46A TO247
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1031067-FCH085N80-F155 | FCH085N80-F155-ND | 2088-FCH085N80-F155 | FCH085N80-F155 | FCH085N80-F155 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 800V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| PD | 446000 milliwatts | 446 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) |