onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH072N60F FCH072N60F

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040248-FCH072N60F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 481W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 52A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 215nC @ 10V Max Input Capacitance: 8660pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 72 mOhm @ 26A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Quantity per package: 450
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH072N60F - 040248-FCH072N60F - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FCH072N60F-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FCH072N60F - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH072N60F - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 600V, 52A, To-247-3; Transistor Polarity Onsemi - 46AC0754 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040248-FCH072N60F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 481W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 52A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 215nC @ 10V Max Input Capacitance: 8660pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 72 mOhm @ 26A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH072N60F - 040248-FCH072N60F - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH072N60F
040248-FCH072N60F
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH072N60F 040248-FCH072N60F
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040248-FCH072N60F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 481W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 52A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 215nC @ 10V Max Input Capacitance: 8660pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 72 mOhm @ 26A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040248-FCH072N60F
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 481W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 52A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 215nC @ 10V
Max Input Capacitance: 8660pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 72 mOhm @ 26A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FCH072N60F-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH072N60F-ND
Single FETs, MOSFETs FCH072N60F-ND
N-Channel 600V 52A (Tc) 481W (Tc) Through Hole TO-247-3

N-Channel 600V 52A (Tc) 481W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Single FETs, MOSFETs - FCH072N60F - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCH072N60F
Single FETs, MOSFETs FCH072N60F
MOSFET N-CH 600V 52A TO247-3

MOSFET N-CH 600V 52A TO247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH072N60F - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH072N60F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH072N60F
MOSFET N-CH 600V 52A TO247-3

MOSFET N-CH 600V 52A TO247-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FCH072N60F
MOSFET FCH072N60F
MOSFET 600V, 52A, 72mOhm N-Channel Mosfet

MOSFET 600V, 52A, 72mOhm N-Channel Mosfet

Buy Now Datasheet
Mosfet, N-Ch, 600V, 52A, To-247-3; Transistor Polarity Onsemi - 46AC0754 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 52A, To-247-3; Transistor Polarity Onsemi
46AC0754
Mosfet, N-Ch, 600V, 52A, To-247-3; Transistor Polarity Onsemi 46AC0754
MOSFET, N-CH, 600V, 52A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 52A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 040248-FCH072N60F FCH072N60F-ND FCH072N60F FCH072N60F FCH072N60F 46AC0754
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH072N60F Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 52A, To-247-3; Transistor Polarity Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
PD 481000 milliwatts 481000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
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