onsemi Single FETs, MOSFETs FCH043N60

Description
N-Channel 600V 75A (Tc) 592W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 600V 75A (Tc) 592W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCH043N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH043N60-ND
Single FETs, MOSFETs FCH043N60-ND
N-Channel 600V 75A (Tc) 592W (Tc) Through Hole TO-247-3

N-Channel 600V 75A (Tc) 592W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH043N60 - 1037879-FCH043N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH043N60
1037879-FCH043N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH043N60 1037879-FCH043N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037879-FCH043N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 592W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 215nC @ 10V Max Input Capacitance: 12225pF @ 400V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 43 mOhm @ 38A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037879-FCH043N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 592W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 215nC @ 10V
Max Input Capacitance: 12225pF @ 400V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 43 mOhm @ 38A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
MOSFET Transistor 278-FCH043N60
POWER FIELD-EFFECT TRANSISTOR, 7 Product overview: FCH043N60 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCH043N60 can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, 7 Product overview: FCH043N60 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCH043N60 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET SF2 600V 43MOHM F TO247

MOSFET SF2 600V 43MOHM F TO247

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH043N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH043N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH043N60
MOSFET N-CH 600V 75A TO247-3

MOSFET N-CH 600V 75A TO247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FCH043N60-ND 1037879-FCH043N60 278-FCH043N60 FCH043N60 FCH043N60
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH043N60 MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247 Bulk 12225 pF @ 400 V
V(BR)DSS 600 volts
PD 592000 milliwatts 592 milliwatts
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