onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N65F_F085 FCH041N65F_F085

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 130474-FCH041N65F_F0 85 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 595W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 76A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 304nC @ 10V Max Input Capacitance: 13566pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 41 mOhm @ 38A, 10V Alternative Parts (Cross-Reference): IPW65R041CFD; APT94N65B2C6; FCH041N65F_F085; SCT3017ALGC11; Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 130474-FCH041N65F_F0 85 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 595W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 76A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 304nC @ 10V Max Input Capacitance: 13566pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 41 mOhm @ 38A, 10V Alternative Parts (Cross-Reference): IPW65R041CFD; APT94N65B2C6; FCH041N65F_F085; SCT3017ALGC11; Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N65F_F085 - 130474-FCH041N65F_F085 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N65F_F085
130474-FCH041N65F_F085
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N65F_F085 130474-FCH041N65F_F085
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 130474-FCH041N65F_F0 85 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 595W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 76A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 304nC @ 10V Max Input Capacitance: 13566pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 41 mOhm @ 38A, 10V Alternative Parts (Cross-Reference): IPW65R041CFD; APT94N65B2C6; FCH041N65F_F085; SCT3017ALGC11; Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 130474-FCH041N65F_F085
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 595W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 76A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 304nC @ 10V
Max Input Capacitance: 13566pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 41 mOhm @ 38A, 10V
Alternative Parts (Cross-Reference): IPW65R041CFD; APT94N65B2C6; FCH041N65F_F085; SCT3017ALGC11;
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
650V 76A MOSFET Transistor
285-FCH041N65F_F085
650V 76A MOSFET Transistor 285-FCH041N65F_F085
MOSFET N-CH 650V 76A TO247 Product overview: FCH041N65F_F085 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 76A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 76A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FCH041N65F_F085 can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 76A TO247 Product overview: FCH041N65F_F085 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 76A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 76A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FCH041N65F_F085 can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 130474-FCH041N65F_F085 285-FCH041N65F_F085
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N65F_F085 650V 76A MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts
PD 595000 milliwatts 595000 milliwatts
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