Win Source Part Number: 1022082-FCH041N65EFL
Category: Discrete Semiconductor Products>Transistors
Series: FRFET®, SuperFET® II
Package: Tube
Standard Package: 450
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Vgs(th) (Max) @ Id: 5V @ 7.6mA
Power Dissipation (Max): 595W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4
Gate Charge (Qg) (Max) @ Vgs: 298 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12560 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: FCH041
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET SF2 650V 44MOHM F TO2474L
MOSFET N-CH 650V 76A TO247-4
| Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1022082-FCH041N65EFLN4 | FCH041N65EFLN4 | FCH041N65EFLN4 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |