N-Channel 650V 76A (Tc) 595W (Tc) Through Hole TO-247-3
MOSFET, N-CH, 650V, 76A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
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| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCH041N65EF-F155OS-ND | 84Y5810 | FCH041N65EF-F155 | FCH041N65EF-F155 | FCH041N65EF-F155 |
| Product Name | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 76A, To-247-3; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-247; TO-247-3 | TO-3; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | |
| IDSS | 76000 milliamps | 76000 milliamps | |||
| rDS(on) | 0.0360 ohms | ||||
| Packing Method | Tube; Tube,Tube |
