POWER FIELD-EFFECT TRANSISTOR, 7
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 125189-FCH041N60F
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 595W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 76A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 360nC @ 10V
Max Input Capacitance: 14365pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 41 mOhm @ 38A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 450
N-Channel 600V 76A (Tc) 595W (Tc) Through Hole TO-247-3
MOSFET 600V N-Channel MOSFET, FRFET
MOSFET N-CH 600V 76A TO247-3
MOSFET, N-CH, 600V, 76A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCH041N60F | 125189-FCH041N60F | FCH041N60F-ND | FCH041N60F | FCH041N60F | 46AC0753 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60F | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 76A, To-247-3; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 600 volts | 600 volts | ||||
| IDSS | 76000 milliamps | 76000 milliamps | ||||
| PD | 595000 milliwatts | 595000 milliwatts |
