onsemi Single FETs, MOSFETs FCH041N60F

Description
N-Channel 600V 76A (Tc) 595W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 600V 76A (Tc) 595W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCH041N60F-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH041N60F-ND
Single FETs, MOSFETs FCH041N60F-ND
N-Channel 600V 76A (Tc) 595W (Tc) Through Hole TO-247-3

N-Channel 600V 76A (Tc) 595W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Single FETs, MOSFETs - FCH041N60F - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCH041N60F
Single FETs, MOSFETs FCH041N60F
POWER FIELD-EFFECT TRANSISTOR, 7

POWER FIELD-EFFECT TRANSISTOR, 7

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60F - 125189-FCH041N60F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60F
125189-FCH041N60F
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60F 125189-FCH041N60F
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 125189-FCH041N60F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 595W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 76A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 360nC @ 10V Max Input Capacitance: 14365pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 41 mOhm @ 38A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 125189-FCH041N60F
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 595W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 76A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 360nC @ 10V
Max Input Capacitance: 14365pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 41 mOhm @ 38A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 450

Buy Now Datasheet
Mosfet, N-Ch, 600V, 76A, To-247-3; Transistor Polarity Onsemi - 46AC0753 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 76A, To-247-3; Transistor Polarity Onsemi
46AC0753
Mosfet, N-Ch, 600V, 76A, To-247-3; Transistor Polarity Onsemi 46AC0753
MOSFET, N-CH, 600V, 76A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 76A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 600V N-Channel MOSFET, FRFET

MOSFET 600V N-Channel MOSFET, FRFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH041N60F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH041N60F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH041N60F
MOSFET N-CH 600V 76A TO247-3

MOSFET N-CH 600V 76A TO247-3

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FCH041N60F-ND FCH041N60F 125189-FCH041N60F 46AC0753 FCH041N60F FCH041N60F
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60F Mosfet, N-Ch, 600V, 76A, To-247-3; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3; TO-247 TO-3; TO-247 TO-247; TO-247-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 76000 milliamps 76000 milliamps
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