onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60E FCH041N60E

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204065-FCH041N60E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 592W (Tc) Family Name: FCH041N60E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 77A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 380nC @ 10V Max Input Capacitance: 13700pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 41 mOhm @ 39A, 10V Alternative Parts (Cross-Reference): R6576KNZ1C9; R6576ENZ1C9; R6576ENZ4C13; IPW60R045CPA; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 450
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204065-FCH041N60E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 592W (Tc) Family Name: FCH041N60E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 77A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 380nC @ 10V Max Input Capacitance: 13700pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 41 mOhm @ 39A, 10V Alternative Parts (Cross-Reference): R6576KNZ1C9; R6576ENZ1C9; R6576ENZ4C13; IPW60R045CPA; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60E - 204065-FCH041N60E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60E
204065-FCH041N60E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60E 204065-FCH041N60E
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204065-FCH041N60E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 592W (Tc) Family Name: FCH041N60E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 77A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 380nC @ 10V Max Input Capacitance: 13700pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 41 mOhm @ 39A, 10V Alternative Parts (Cross-Reference): R6576KNZ1C9; R6576ENZ1C9; R6576ENZ4C13; IPW60R045CPA; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204065-FCH041N60E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 592W (Tc)
Family Name: FCH041N60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 77A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 380nC @ 10V
Max Input Capacitance: 13700pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 41 mOhm @ 39A, 10V
Alternative Parts (Cross-Reference): R6576KNZ1C9; R6576ENZ1C9; R6576ENZ4C13; IPW60R045CPA;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FCH041N60E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH041N60E-ND
Single FETs, MOSFETs FCH041N60E-ND
N-Channel 600V 77A (Tc) 592W (Tc) Through Hole TO-247-3

N-Channel 600V 77A (Tc) 592W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Single FETs, MOSFETs - FCH041N60E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCH041N60E
Single FETs, MOSFETs FCH041N60E
POWER FIELD-EFFECT TRANSISTOR, 7

POWER FIELD-EFFECT TRANSISTOR, 7

Supplier's Site Datasheet
Single FETs, MOSFETs - FCH041N60E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCH041N60E
Single FETs, MOSFETs FCH041N60E
MOSFET N-CH 600V 77A TO247-3

MOSFET N-CH 600V 77A TO247-3

Supplier's Site Datasheet
MOSFETs - 8095053P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8095053P
MOSFETs 8095053P
MOSFET, Fairchild, FCH041N60E

MOSFET, Fairchild, FCH041N60E

Supplier's Site
MOSFETs - 8095053 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8095053
MOSFETs 8095053
MOSFET, Fairchild, FCH041N60E

MOSFET, Fairchild, FCH041N60E

Supplier's Site
MOSFETs - 1454402 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1454402
MOSFETs 1454402
MOSFET, Fairchild, FCH041N60E

MOSFET, Fairchild, FCH041N60E

Supplier's Site
Sheung Wan, Hong Kong
MOSFET SF2 600V 41MOHM E TO247

MOSFET SF2 600V 41MOHM E TO247

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH041N60E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH041N60E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH041N60E
MOSFET N-CH 600V 77A TO247-3

MOSFET N-CH 600V 77A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 204065-FCH041N60E FCH041N60E-ND FCH041N60E 8095053P 8095053 FCH041N60E FCH041N60E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60E Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 592000 milliwatts 592000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247 TO-247; To-247 TO-247; TO-247-3
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