POWER FIELD-EFFECT TRANSISTOR, 7
MOSFET N-CH 600V 77A TO247-3
N-Channel 600V 77A (Tc) 592W (Tc) Through Hole TO-247-3
MOSFETs N-Channel SuperFET II Easy-Drive MOSFET 600V, 77A, 41mO Product overview: FCH041N60E from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 77A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 77A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCH041N60E can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204065-FCH041N60E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 592W (Tc)
Family Name: FCH041N60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 77A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 380nC @ 10V
Max Input Capacitance: 13700pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 41 mOhm @ 39A, 10V
Alternative Parts (Cross-Reference): R6576KNZ1C9; R6576ENZ1C9; R6576ENZ4C13; IPW60R045CPA;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 450
MOSFET N-CH 600V 77A TO247-3
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCH041N60E | 8095053P | 8095053 | FCH041N60E-ND | 2088-FCH041N60E | 204065-FCH041N60E | FCH041N60E | FCH041N60E |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | N-Channel 600V 77A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60E | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 600 volts | 600 volts | ||||||
| IDSS | 77000 milliamps | |||||||
| PD | 592000 milliwatts | 592 milliwatts | 592000 milliwatts |