onsemi Single FETs, MOSFETs FCH041N60E

Description
N-Channel 600V 77A (Tc) 592W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 600V 77A (Tc) 592W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCH041N60E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCH041N60E-ND
Single FETs, MOSFETs FCH041N60E-ND
N-Channel 600V 77A (Tc) 592W (Tc) Through Hole TO-247-3

N-Channel 600V 77A (Tc) 592W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60E - 204065-FCH041N60E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60E
204065-FCH041N60E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60E 204065-FCH041N60E
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204065-FCH041N60E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 592W (Tc) Family Name: FCH041N60E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 77A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 380nC @ 10V Max Input Capacitance: 13700pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 41 mOhm @ 39A, 10V Alternative Parts (Cross-Reference): R6576KNZ1C9; R6576ENZ1C9; R6576ENZ4C13; IPW60R045CPA; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204065-FCH041N60E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 592W (Tc)
Family Name: FCH041N60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 77A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 380nC @ 10V
Max Input Capacitance: 13700pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 41 mOhm @ 39A, 10V
Alternative Parts (Cross-Reference): R6576KNZ1C9; R6576ENZ1C9; R6576ENZ4C13; IPW60R045CPA;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
MOSFETs - 8095053P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8095053P
MOSFETs 8095053P
MOSFET, Fairchild, FCH041N60E

MOSFET, Fairchild, FCH041N60E

Supplier's Site
MOSFETs - 8095053 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8095053
MOSFETs 8095053
MOSFET, Fairchild, FCH041N60E

MOSFET, Fairchild, FCH041N60E

Supplier's Site
MOSFETs - 1454402 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1454402
MOSFETs 1454402
MOSFET, Fairchild, FCH041N60E

MOSFET, Fairchild, FCH041N60E

Supplier's Site
Single FETs, MOSFETs - FCH041N60E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCH041N60E
Single FETs, MOSFETs FCH041N60E
POWER FIELD-EFFECT TRANSISTOR, 7

POWER FIELD-EFFECT TRANSISTOR, 7

Supplier's Site Datasheet
Single FETs, MOSFETs - FCH041N60E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCH041N60E
Single FETs, MOSFETs FCH041N60E
MOSFET N-CH 600V 77A TO247-3

MOSFET N-CH 600V 77A TO247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCH041N60E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCH041N60E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCH041N60E
MOSFET N-CH 600V 77A TO247-3

MOSFET N-CH 600V 77A TO247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET SF2 600V 41MOHM E TO247

MOSFET SF2 600V 41MOHM E TO247

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCH041N60E-ND 204065-FCH041N60E 8095053P 8095053 FCH041N60E FCH041N60E FCH041N60E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCH041N60E MOSFETs MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247 TO-247; TO-247 TO-247; To-247 TO-247; TO-247-3 TO-247; TO-247-3
V(BR)DSS 600 volts 600 volts
PD 592000 milliwatts 592000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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